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Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision
Advanced Science ( IF 14.3 ) Pub Date : 2021-12-29 , DOI: 10.1002/advs.202104632 Xuanyu Shan 1 , Chenyi Zhao 1 , Xinnong Wang 1 , Zhongqiang Wang 1 , Shencheng Fu 1 , Ya Lin 1 , Tao Zeng 1 , Xiaoning Zhao 1 , Haiyang Xu 1 , Xintong Zhang 1 , Yichun Liu 1
Advanced Science ( IF 14.3 ) Pub Date : 2021-12-29 , DOI: 10.1002/advs.202104632 Xuanyu Shan 1 , Chenyi Zhao 1 , Xinnong Wang 1 , Zhongqiang Wang 1 , Shencheng Fu 1 , Ya Lin 1 , Tao Zeng 1 , Xiaoning Zhao 1 , Haiyang Xu 1 , Xintong Zhang 1 , Yichun Liu 1
Affiliation
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Exploration of optoelectronic memristors with the capability to combine sensing and processing functions is required to promote development of efficient neuromorphic vision. In this work, the authors develop a plasmonic optoelectronic memristor that relies on the effects of localized surface plasmon resonance (LSPR) and optical excitation in an Ag–TiO2 nanocomposite film. Fully light-induced synaptic plasticity (e.g., potentiation and depression) under visible and ultraviolet light stimulations is demonstrated, which enables the functional combination of visual sensing and low-level image pre-processing (including contrast enhancement and noise reduction) in a single device. Furthermore, the light-gated and electrically-driven synaptic plasticity can be performed in the same device, in which the spike-timing-dependent plasticity (STDP) learning functions can be reversibly modulated by visible and ultraviolet light illuminations. Thereby, the high-level image processing function, i.e., image recognition, can also be performed in this memristor, whose recognition rate and accuracy are obviously enhanced as a result of image pre-processing and light-gated STDP enhancement. Experimental analysis shows that the memristive switching mechanism under optical stimulation can be attributed to the oxidation/reduction of Ag nanoparticles due to the effects of LSPR and optical excitation. The authors' work proposes a new type of plasmonic optoelectronic memristor with fully light-modulated capability that may promote the future development of efficient neuromorphic vision.
中文翻译：
等离激元光电忆阻器实现神经形态视觉的完全光调制突触可塑性
需要探索具有结合传感和处理功能的光电忆阻器，以促进高效神经形态视觉的发展。在这项工作中，作者开发了一种等离子体光电忆阻器，它依赖于 Ag-TiO 2纳米复合薄膜中局域表面等离子体共振 (LSPR) 和光激发的效应。证明了可见光和紫外光刺激下完全光诱导的突触可塑性（例如，增强和抑制），这使得在单个设备中能够实现视觉传感和低级图像预处理（包括对比度增强和降噪）的功能组合。此外，光门控和电驱动的突触可塑性可以在同一设备中进行，其中尖峰时序依赖性可塑性（STDP）学习功能可以通过可见光和紫外光照明进行可逆调节。因此，该忆阻器还可以实现高级图像处理功能，即图像识别，由于图像预处理和光门控STDP增强，识别率和准确度明显提高。实验分析表明，光刺激下的忆阻切换机制可归因于局域表面等离子体共振和光激发作用下Ag纳米颗粒的氧化/还原。作者的工作提出了一种具有完全光调制能力的新型等离子体光电忆阻器，可能会促进高效神经形态视觉的未来发展。
更新日期：2021-12-29
中文翻译：
等离激元光电忆阻器实现神经形态视觉的完全光调制突触可塑性
需要探索具有结合传感和处理功能的光电忆阻器，以促进高效神经形态视觉的发展。在这项工作中，作者开发了一种等离子体光电忆阻器，它依赖于 Ag-TiO 2纳米复合薄膜中局域表面等离子体共振 (LSPR) 和光激发的效应。证明了可见光和紫外光刺激下完全光诱导的突触可塑性（例如，增强和抑制），这使得在单个设备中能够实现视觉传感和低级图像预处理（包括对比度增强和降噪）的功能组合。此外，光门控和电驱动的突触可塑性可以在同一设备中进行，其中尖峰时序依赖性可塑性（STDP）学习功能可以通过可见光和紫外光照明进行可逆调节。因此，该忆阻器还可以实现高级图像处理功能，即图像识别，由于图像预处理和光门控STDP增强，识别率和准确度明显提高。实验分析表明，光刺激下的忆阻切换机制可归因于局域表面等离子体共振和光激发作用下Ag纳米颗粒的氧化/还原。作者的工作提出了一种具有完全光调制能力的新型等离子体光电忆阻器，可能会促进高效神经形态视觉的未来发展。
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