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Ultrasensitive and Broad-Spectrum Photodetectors Based on InSe/ReS2 Heterostructure
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-12-29 , DOI: 10.1002/adom.202101772
Haixin Ma 1, 2 , Yanhui Xing 1 , Jun Han 1 , Boyao Cui 1 , Ting Lei 2 , Huayao Tu 2 , Baolu Guan 1 , Zhongming Zeng 2, 3 , Baoshun Zhang 2 , Weiming Lv 2, 3
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-12-29 , DOI: 10.1002/adom.202101772
Haixin Ma 1, 2 , Yanhui Xing 1 , Jun Han 1 , Boyao Cui 1 , Ting Lei 2 , Huayao Tu 2 , Baolu Guan 1 , Zhongming Zeng 2, 3 , Baoshun Zhang 2 , Weiming Lv 2, 3
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Photogating effect based on vertical structure of 2D materials allows for the realization of a highly sensitive photodetector. A highly sensitive and broad-spectrum (365–965 nm) photodetector is reported based on the indium selenide (InSe)/rhenium disulfide (ReS2) vertical heterostructure, where the top layer InSe serves as the photogate to regulate the channel current, enabling a large photoconductive gain of 106. The detectivity of the photodetector can reach 6.51 × 1013 Jones, making this one of the highest values among reported transition metal dichalcogenide photodetectors. The photodetector represents a high responsivity of 1921 A W−1, an ultrahigh external quantum efficiency (EQE) of 6.53 × 105%, and a fast response time of 21.6 ms. The outstanding properties of the InSe/ReS2 heterojunction reveal the promising potential in high-efficient, ultrasensitive, broadband photodetectors.
中文翻译:
基于 InSe/ReS2 异质结构的超灵敏和广谱光电探测器
基于二维材料垂直结构的光电门效应可以实现高灵敏度光电探测器。报道了一种基于硒化铟 (InSe)/二硫化铼 (ReS 2 ) 垂直异质结构的高灵敏度和广谱 (365–965 nm) 光电探测器,其中顶层 InSe 用作调节通道电流的光电门,使10 6的大光电导增益。该光电探测器的探测率可达6.51×10 13 Jones,是已报道的过渡金属二硫属化物光电探测器中的最高值之一。该光电探测器具有 1921 AW -1的高响应度,6.53 × 10 5的超高外量子效率 (EQE)%,以及 21.6 ms 的快速响应时间。InSe/ReS 2异质结的突出特性揭示了在高效、超灵敏、宽带光电探测器中的巨大潜力。
更新日期:2021-12-29
中文翻译:
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基于 InSe/ReS2 异质结构的超灵敏和广谱光电探测器
基于二维材料垂直结构的光电门效应可以实现高灵敏度光电探测器。报道了一种基于硒化铟 (InSe)/二硫化铼 (ReS 2 ) 垂直异质结构的高灵敏度和广谱 (365–965 nm) 光电探测器,其中顶层 InSe 用作调节通道电流的光电门,使10 6的大光电导增益。该光电探测器的探测率可达6.51×10 13 Jones,是已报道的过渡金属二硫属化物光电探测器中的最高值之一。该光电探测器具有 1921 AW -1的高响应度,6.53 × 10 5的超高外量子效率 (EQE)%,以及 21.6 ms 的快速响应时间。InSe/ReS 2异质结的突出特性揭示了在高效、超灵敏、宽带光电探测器中的巨大潜力。