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Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake
ACS Nano ( IF 15.8 ) Pub Date : 2021-12-20 , DOI: 10.1021/acsnano.1c09844 Chun Li 1 , Liyun Zhao 1 , Qiuyu Shang 1 , Ruonan Wang 2 , Peng Bai 3 , Jun Zhang 4 , Yunan Gao 3 , Qiang Cao 2 , Zhongming Wei 4 , Qing Zhang 1
ACS Nano ( IF 15.8 ) Pub Date : 2021-12-20 , DOI: 10.1021/acsnano.1c09844 Chun Li 1 , Liyun Zhao 1 , Qiuyu Shang 1 , Ruonan Wang 2 , Peng Bai 3 , Jun Zhang 4 , Yunan Gao 3 , Qiang Cao 2 , Zhongming Wei 4 , Qing Zhang 1
Affiliation
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The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated γ-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of ∼1030 nm. The lasing action occurs at the sub-Mott density level and is generated by exciton–exciton scattering with a high net modal optical gain of ∼1029 cm–1. Moreover, the lasing is sustained for microdisks fabricated by a simple laser printing with a reduced threshold. These results suggest that InSe is a promising material for near-infrared microlasers and can be employed in a wide range of applications, including imaging, sensing, and optical interconnects.
中文翻译：
机械剥离的 InSe 微薄片的室温近红外激子激光
使用二维半导体开发芯片级近红外激光源对于维持范德华集成光互连的架构势在必行。然而，已建立的二维半导体激光器可能存在单层增益介质可控性差、硅上光损耗大或外部光学微腔制作复杂等缺点。这项研究证明了机械剥离的 γ 相硒化铟 (InSe) 微薄片在中心波长约为 1030 nm 处没有外部光学微腔的室温近红外激光。激光作用发生在亚莫特密度水平，由激子-激子散射产生，具有 ∼1029 cm -1的高净模态光学增益. 此外，激光对于通过降低阈值的简单激光打印制造的微盘来说是持续的。这些结果表明，InSe 是一种很有前途的近红外微激光器材料，可用于广泛的应用，包括成像、传感和光学互连。
更新日期：2022-01-25
中文翻译：
机械剥离的 InSe 微薄片的室温近红外激子激光
使用二维半导体开发芯片级近红外激光源对于维持范德华集成光互连的架构势在必行。然而，已建立的二维半导体激光器可能存在单层增益介质可控性差、硅上光损耗大或外部光学微腔制作复杂等缺点。这项研究证明了机械剥离的 γ 相硒化铟 (InSe) 微薄片在中心波长约为 1030 nm 处没有外部光学微腔的室温近红外激光。激光作用发生在亚莫特密度水平，由激子-激子散射产生，具有 ∼1029 cm -1的高净模态光学增益. 此外，激光对于通过降低阈值的简单激光打印制造的微盘来说是持续的。这些结果表明，InSe 是一种很有前途的近红外微激光器材料，可用于广泛的应用，包括成像、传感和光学互连。
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