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Efficient Ultra-Broadband Ga4GeO8:Cr3+ Phosphors with Tunable Peak Wavelengths from 835 to 980 nm for NIR pc-LED Application
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-12-18 , DOI: 10.1002/adom.202102229
Leqi Yao 1 , Qiyue Shao 1 , Meiling Shi 1 , Tianqi Shang 1 , Yan Dong 1 , Chao Liang 2 , Jinhua He 2 , Jianqing Jiang 3
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-12-18 , DOI: 10.1002/adom.202102229
Leqi Yao 1 , Qiyue Shao 1 , Meiling Shi 1 , Tianqi Shang 1 , Yan Dong 1 , Chao Liang 2 , Jinhua He 2 , Jianqing Jiang 3
Affiliation
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Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold great potential for applications ranging from night vision to non-destructive detection. However, it remains a long-standing challenge to develop NIR phosphors simultaneously with longer-wavelength broadband emissions and higher efficiency. Herein, ultra-broadband Ga4GeO8:Cr3+ (GGO:Cr3+) phosphors are developed, with the NIR emission covering 700–1300 nm. Furthermore, tunable emission bands peaking from 835 to 980 nm are achieved simply by varying the Cr3+ concentration. Particularly, emission maxima (λmax) of GGO:xCr3+ shift from 850 to 900 nm without intensity loss when increasing x values between 0.02 and 0.10. An internal quantum yield of 60% is achieved for GGO:0.02Cr3+ (λmax ≈ 850 nm, full width at half maximum (FWHM) ≈215 nm). The origin of tunable ultra-broadband emissions of GGO:Cr3+ is revealed on the basis of structural and time-resolved spectroscopic analysis. The pc-LED fabricated by GGO:0.02Cr3+ exhibits a maximum NIR output power of ≈56 mW at 400 mA drive current, and its application in high-penetration quality analysis of fruits is also demonstrated. The results indicate that GGO:Cr3+ phosphors have high promise for practical applications in NIR pc-LED devices.
中文翻译：
用于 NIR pc-LED 应用的具有 835 至 980 nm 可调峰值波长的高效超宽带 Ga4GeO8:Cr3+ 荧光粉
近红外 (NIR) 荧光粉转换发光二极管 (pc-LED) 在从夜视到无损检测的应用中具有巨大潜力。然而，同时开发具有更长波长宽带发射和更高效率的近红外荧光粉仍然是一个长期存在的挑战。在此，开发了超宽带Ga 4 GeO 8 :Cr 3+ (GGO:Cr 3+ ) 荧光粉，近红外发射范围为700-1300 nm。此外，通过改变 Cr 3+浓度即可实现峰值从 835 到 980 nm 的可调发射带。特别地， GGO的发射最大值（λ max ）： x Cr 3+当x值在 0.02 和 0.10 之间增加时，从 850 到 900 nm 没有强度损失。GGO:0.02Cr 3+ (λ max ≈ 850 nm, 半高全宽 (FWHM) ≈215 nm)实现了 60% 的内量子产率。在结构和时间分辨光谱分析的基础上，揭示了 GGO:Cr 3+可调谐超宽带发射的起源。GGO:0.02Cr 3+制造的pc-LED在400 mA驱动电流下的最大近红外输出功率约为56 mW，并展示了其在水果高穿透质量分析中的应用。结果表明，GGO:Cr 3+荧光粉在 NIR pc-LED 器件的实际应用中具有很高的应用前景。
更新日期：2021-12-18
中文翻译：
用于 NIR pc-LED 应用的具有 835 至 980 nm 可调峰值波长的高效超宽带 Ga4GeO8:Cr3+ 荧光粉
近红外 (NIR) 荧光粉转换发光二极管 (pc-LED) 在从夜视到无损检测的应用中具有巨大潜力。然而，同时开发具有更长波长宽带发射和更高效率的近红外荧光粉仍然是一个长期存在的挑战。在此，开发了超宽带Ga 4 GeO 8 :Cr 3+ (GGO:Cr 3+ ) 荧光粉，近红外发射范围为700-1300 nm。此外，通过改变 Cr 3+浓度即可实现峰值从 835 到 980 nm 的可调发射带。特别地， GGO的发射最大值（λ max ）： x Cr 3+当x值在 0.02 和 0.10 之间增加时，从 850 到 900 nm 没有强度损失。GGO:0.02Cr 3+ (λ max ≈ 850 nm, 半高全宽 (FWHM) ≈215 nm)实现了 60% 的内量子产率。在结构和时间分辨光谱分析的基础上，揭示了 GGO:Cr 3+可调谐超宽带发射的起源。GGO:0.02Cr 3+制造的pc-LED在400 mA驱动电流下的最大近红外输出功率约为56 mW，并展示了其在水果高穿透质量分析中的应用。结果表明，GGO:Cr 3+荧光粉在 NIR pc-LED 器件的实际应用中具有很高的应用前景。
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