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Integrated Gallium Nitride Nonlinear Photonics
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2021-12-11 , DOI: 10.1002/lpor.202100071 Yanzhen Zheng 1 , Changzheng Sun 1 , Bing Xiong 1 , Lai Wang 1 , Zhibiao Hao 1 , Jian Wang 1 , Yanjun Han 1 , Hongtao Li 1 , Jiadong Yu 1 , Yi Luo 1
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2021-12-11 , DOI: 10.1002/lpor.202100071 Yanzhen Zheng 1 , Changzheng Sun 1 , Bing Xiong 1 , Lai Wang 1 , Zhibiao Hao 1 , Jian Wang 1 , Yanjun Han 1 , Hongtao Li 1 , Jiadong Yu 1 , Yi Luo 1
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Gallium nitride (GaN) as a wide bandgap material is widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN are rarely studied owing to the relatively high optical loss of GaN waveguides (typically ≈2 dB cm−1). In this paper, GaNOI microresonators with intrinsic quality factor over 2.5 million are reported, corresponding to an optical loss of 0.17 dB cm−1. Parametric oscillation threshold power as low as 6.2 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.4 × 10−18 m2 W−1, which is several times larger than that of commonly used platform such as Si3N4, LiNbO3, and AlN. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a promising platform for chip-scale nonlinear applications.
中文翻译：
集成氮化镓非线性光子学
氮化镓（GaN）作为一种宽带隙材料，广泛应用于固态照明。由于其高非线性和高折射率对比度，绝缘体上氮化镓 (GaNOI) 也是非线性光学应用的有前途的平台。尽管 GaN 具有有趣的光学特性，但由于 GaN 波导的光学损耗相对较高（通常为 ≈2 dB cm -1），GaN 的非线性应用很少被研究。在本文中，报告了内在品质因数超过 250 万的 GaNOI 微谐振器，对应的光损耗为 0.17 dB cm -1。参数振荡阈值功率低至 6.2 mW，实验提取的 GaN 在电信波长处的非线性指数估计为n 2 = 1.4 × 10-18 m 2 W -1，比常用的Si 3 N 4、LiNbO 3、AlN等平台大几倍。GaN中的单孤子产生是通过辅助激光泵浦方案实现的，以减轻GaN中的高热折射效应。大的固有非线性折射率，加上其宽带透明窗口和高折射率对比度，使 GaNOI 成为芯片级非线性应用的有前途的平台。
更新日期：2022-01-08
中文翻译：
集成氮化镓非线性光子学
氮化镓（GaN）作为一种宽带隙材料，广泛应用于固态照明。由于其高非线性和高折射率对比度，绝缘体上氮化镓 (GaNOI) 也是非线性光学应用的有前途的平台。尽管 GaN 具有有趣的光学特性，但由于 GaN 波导的光学损耗相对较高（通常为 ≈2 dB cm -1），GaN 的非线性应用很少被研究。在本文中，报告了内在品质因数超过 250 万的 GaNOI 微谐振器，对应的光损耗为 0.17 dB cm -1。参数振荡阈值功率低至 6.2 mW，实验提取的 GaN 在电信波长处的非线性指数估计为n 2 = 1.4 × 10-18 m 2 W -1，比常用的Si 3 N 4、LiNbO 3、AlN等平台大几倍。GaN中的单孤子产生是通过辅助激光泵浦方案实现的，以减轻GaN中的高热折射效应。大的固有非线性折射率，加上其宽带透明窗口和高折射率对比度，使 GaNOI 成为芯片级非线性应用的有前途的平台。
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