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Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α‑Ga2Se3
Small ( IF 13.0 ) Pub Date : 2021-12-08 , DOI: 10.1002/smll.202105599
Wuhong Xue 1 , Qitao Jiang 1 , Fakun Wang 2 , Ri He 3 , Ruixue Pang 1 , Huali Yang 3 , Peng Wang 1 , Ruilong Yang 1 , Zhicheng Zhong 3 , Tianyou Zhai 2 , Xiaohong Xu 1
Small ( IF 13.0 ) Pub Date : 2021-12-08 , DOI: 10.1002/smll.202105599
Wuhong Xue 1 , Qitao Jiang 1 , Fakun Wang 2 , Ri He 3 , Ruixue Pang 1 , Huali Yang 3 , Peng Wang 1 , Ruilong Yang 1 , Zhicheng Zhong 3 , Tianyou Zhai 2 , Xiaohong Xu 1
Affiliation
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2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α‑Ga2Se3 can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α‑Ga2Se3 nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.
中文翻译：
在二维缺陷半导体 α-Ga2Se3 中发现稳健的铁电体
为了使铁电器件小型化并应对传统铁电体带来的挑战，需要在室温下在原子级厚度中具有稳健极性顺序的二维铁电体。这些材料通常具有作为铁电性先决条件的极点群结构。然而，将极性结构引入其他非极性二维材料以产生铁电仍然是一个挑战。在这里，通过结合第一性原理计算和实验研究，据报道，位于立方缺陷半导体α-Ga 2 Se 3的不对称位点的天然Ga空位缺陷可以诱导极性结构。同时，诱导极化可以在中等能垒中切换。在 2D α-Ga 中观察到切换极化≈4 nm 的2 Se 3纳米薄片，具有高达 450 K 的高转换温度。这种极化转换可能是通过施加电场使相邻不对称位点之间的 Ga 空位位移引起的。这项工作消除了铁电体的点群限制，将二维铁电体的范围扩展到天然缺陷半导体。
更新日期：2021-12-08
中文翻译：
在二维缺陷半导体 α-Ga2Se3 中发现稳健的铁电体
为了使铁电器件小型化并应对传统铁电体带来的挑战，需要在室温下在原子级厚度中具有稳健极性顺序的二维铁电体。这些材料通常具有作为铁电性先决条件的极点群结构。然而，将极性结构引入其他非极性二维材料以产生铁电仍然是一个挑战。在这里，通过结合第一性原理计算和实验研究，据报道，位于立方缺陷半导体α-Ga 2 Se 3的不对称位点的天然Ga空位缺陷可以诱导极性结构。同时，诱导极化可以在中等能垒中切换。在 2D α-Ga 中观察到切换极化≈4 nm 的2 Se 3纳米薄片，具有高达 450 K 的高转换温度。这种极化转换可能是通过施加电场使相邻不对称位点之间的 Ga 空位位移引起的。这项工作消除了铁电体的点群限制，将二维铁电体的范围扩展到天然缺陷半导体。
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