Activating Silent Synapses in Sulfurized Indium Selenide for Neuromorphic Computing,ACS Applied Materials & Interfaces

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Activating Silent Synapses in Sulfurized Indium Selenide for Neuromorphic Computing
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-12-08 , DOI: 10.1021/acsami.1c19062
Song Hao _{1,

2} , Shuai Zhong ₃ , Xinglong Ji ₃ , Khin Yin Pang ₁ , Nan Wang ₂ , Huimin Li ₁ , Yu Jiang ₁ , Kian Guan Lim ₁ , Tow Chong Chong ₁ , Rong Zhao ₃ , Desmond K Loke ₂

Affiliation

The transformation from silent to functional synapses is accompanied by the evolutionary process of human brain development and is essential to hardware implementation of the evolutionary artificial neural network but remains a challenge for mimicking silent to functional synapse activation. Here, we developed a simple approach to successfully realize activation of silent to functional synapses by controlled sulfurization of chemical vapor deposition-grown indium selenide crystals. The underlying mechanism is attributed to the migration of sulfur anions introduced by sulfurization. One of our most important findings is that the functional synaptic behaviors can be modulated by the degree of sulfurization and temperature. In addition, the essential synaptic behaviors including potentiation/depression, paired-pulse facilitation, and spike-rate-dependent plasticity are successfully implemented in the partially sulfurized functional synaptic device. The developed simple approach of introducing sulfur anions in layered selenide opens an effective new avenue to realize activation of silent synapses for application in evolutionary artificial neural networks.

中文翻译：

激活硫化硒化铟中的沉默突触用于神经形态计算

从沉默到功能性突触的转变伴随着人类大脑发育的进化过程，对于进化人工神经网络的硬件实现至关重要，但对于模仿沉默到功能性突触激活仍然是一个挑战。在这里，我们开发了一种简单的方法，通过控制化学气相沉积生长的硒化铟晶体的硫化，成功地实现了对功能性突触的沉默激活。潜在机制归因于硫化引入的硫阴离子的迁移。我们最重要的发现之一是功能性突触行为可以通过硫化程度和温度来调节。此外，基本的突触行为包括增强/抑制、成对脉冲促进、在部分硫化的功能性突触装置中成功实现了与峰值速率相关的可塑性。开发的在层状硒化物中引入硫阴离子的简单方法为实现沉默突触的激活开辟了一条有效的新途径，以应用于进化人工神经网络。

更新日期：2021-12-22

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