当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Thermoelectric Ag2Se: Imperfection, Homogeneity, and Reproducibility
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-11-30 , DOI: 10.1021/acsami.1c18483 Shaoji Huang 1 , Tian-Ran Wei 1 , Heyang Chen 1 , Jie Xiao 2 , Min Zhu 3 , Kunpeng Zhao 1 , Xun Shi 1, 2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-11-30 , DOI: 10.1021/acsami.1c18483 Shaoji Huang 1 , Tian-Ran Wei 1 , Heyang Chen 1 , Jie Xiao 2 , Min Zhu 3 , Kunpeng Zhao 1 , Xun Shi 1, 2
Affiliation
|
Ag2Se is a narrow band gap n-type semiconductor with high carrier mobility and low lattice thermal conductivity. It has high thermoelectric performance near room temperature. However, there is a noticeable data discrepancy for thermoelectric performance in the reported literature studies, which greatly hinders the rational understanding and potential application of this material. In this work, we comprehensively studied the homogeneity, reproducibility, and thermal stability of bulk Ag2Se prepared by melting and mechanical alloying methods followed by spark plasma sintering. By virtue of the atom probe topology technique, we revealed nanosized Ag- or Se-rich precipitates and micropores with Se-aggregated interfaces that have not been detected previously. The samples prepared by melting and spark plasma sintering exhibit the best homogeneity and repeatability in thermoelectric properties despite abundant nanoprecipitates. Moreover, the thermoelectric performance of Ag2Se is greatly improved by introducing a slight amount of excess selenium. The average zT can steadily reach 0.8–0.9 in the range of 300–380 K, which is among the highest values reported for Ag2Se-based materials. This work will rationalize the evaluation of the thermoelectric performance of Ag2Se.
中文翻译：
热电 Ag2Se：缺陷、均匀性和再现性
Ag 2 Se 是一种窄带隙n 型半导体，具有高载流子迁移率和低晶格热导率。它在接近室温时具有较高的热电性能。然而，在报道的文献研究中存在明显的热电性能数据差异，极大地阻碍了对该材料的合理理解和潜在应用。在这项工作中，我们全面研究了块状 Ag 2的均匀性、再现性和热稳定性通过熔化和机械合金化方法然后放电等离子烧结制备硒。凭借原子探针拓扑技术，我们揭示了纳米尺寸的富含银或硒的沉淀物和微孔，这些微孔具有以前未检测到的硒聚集界面。尽管有大量的纳米沉淀物，但通过熔化和放电等离子烧结制备的样品在热电性能方面表现出最佳的均匀性和可重复性。此外，通过引入少量过量的硒，Ag 2 Se的热电性能大大提高。在 300-380 K 的范围内，平均zT可以稳定地达到 0.8-0.9，这是 Ag 2报告的最高值之一硒基材料。这项工作将使 Ag 2 Se的热电性能的评估合理化。
更新日期：2021-12-22
中文翻译：
热电 Ag2Se：缺陷、均匀性和再现性
Ag 2 Se 是一种窄带隙n 型半导体，具有高载流子迁移率和低晶格热导率。它在接近室温时具有较高的热电性能。然而，在报道的文献研究中存在明显的热电性能数据差异，极大地阻碍了对该材料的合理理解和潜在应用。在这项工作中，我们全面研究了块状 Ag 2的均匀性、再现性和热稳定性通过熔化和机械合金化方法然后放电等离子烧结制备硒。凭借原子探针拓扑技术，我们揭示了纳米尺寸的富含银或硒的沉淀物和微孔，这些微孔具有以前未检测到的硒聚集界面。尽管有大量的纳米沉淀物，但通过熔化和放电等离子烧结制备的样品在热电性能方面表现出最佳的均匀性和可重复性。此外，通过引入少量过量的硒，Ag 2 Se的热电性能大大提高。在 300-380 K 的范围内，平均zT可以稳定地达到 0.8-0.9，这是 Ag 2报告的最高值之一硒基材料。这项工作将使 Ag 2 Se的热电性能的评估合理化。
京公网安备 11010802027423号