In this work, we demonstrated the NiO_x/β-Ga₂O₃ heterojunction with reduced reverse current and on-resistance via F plasma pre-treatment. The band offsets and the elemental composition of the heterojunction are investigated by X-ray photoelectron spectroscopy. It shows that the valence and conduction band offsets of the NiO_x/β-Ga₂O₃ heterojunction decrease with F plasma pre-treatment. The on-current of Ni/NiO_x/β-Ga₂O₃ heterojunction diodes increases from 10^-3 to 11.82 A/cm², which corresponds to the on-resistance of 100 to 0.2 Ω cm², and the ideality factor decreases from 2.42 to 1.06. For less than 40 V reverse bias, the leakage current of the heterojunction can be suppressed with F pre-treatment. It is reduced from 10⁻⁵ to 10⁻⁶ A/cm² under −20 V bias. In addition, the electrical properties of the heterojunction are restored after thermal cycling. The n-type NiO_x and interface F plasma pre-treatment processes exhibit good temperature stability. These observations in the Ni/NiO_x/β-Ga₂O₃ heterojunction with the F plasma pre-treatment show a great potential in improving the performance of gallium oxide-based heterojunctions.

在这项工作中，我们通过 F 等离子体预处理证明了 NiO _x /β-Ga ₂ O ₃异质结具有降低的反向电流和导通电阻。通过 X 射线光电子能谱研究异质结的带偏移和元素组成。这表明NiO _x /β-Ga ₂ O ₃异质结的价带偏移和导带偏移随着F等离子体预处理而减小。Ni/NiO _x /β-Ga ₂ O ₃异质结二极管的导通电流从10 ^-3增加到11.82 A/cm ²，对应导通电阻为100到0.2 Ω cm ²，理想因子从 2.42 下降到 1.06。对于小于 40 V 的反向偏压，可以通过 F 预处理来抑制异质结的漏电流。在-20 V偏压下，它从10 ^-5减少到10 ^-6  A/cm ²。此外，异质结的电性能在热循环后得以恢复。n型NiO _x和界面F等离子体预处理工艺表现出良好的温度稳定性。在 Ni/NiO _x /β-Ga ₂ O ₃异质结和 F 等离子体预处理中的这些观察表明，在改善基于氧化镓的异质结性能方面具有巨大潜力。