Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires,Crystal Growth & Design

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Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-11-24 , DOI: 10.1021/acs.cgd.1c00945
Iuliia Dudko _{1,

2,

3} , Thomas Dursap ₁ , Anne D. Lamirand ₁ , Claude Botella ₁ , Philippe Regreny ₁ , Alexandre Danescu ₁ , Solène Brottet ₁ , Matthieu Bugnet ₄ , Sumeet Walia _{2,

3} , Nicolas Chauvin ₁ , José Penuelas ₁

Affiliation

Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the fabrication of hexagonal group IV semiconductors within the vapor–liquid–solid method has been obtained using gold as a catalyst thus far. In this letter, we show the synthesis of hexagonal Ge on self-assisted GaAs nanowires using molecular beam epitaxy. With an accurate tuning of the Ga and As molecular beam flux, we selected the crystal phase, cubic or hexagonal, of the GaAs NWs during the growth. A 500-nm-long hexagonal segment of Ge with high structural quality and without any visible defects is obtained, and we show that Ge keeps the crystal phase of the core using scanning transmission electron microscopy. Finally X-ray photoelectron spectroscopy reveals a strong incorporation of As in the Ge. This study demonstrates the first growth of hexagonal Ge in the Au-free approach, integrated on silicon substrate.

中文翻译：

在自辅助 GaAs 纳米线上通过分子束外延生长六方 Ge

六方IV族材料，如硅和锗，有望为未来光子技术的发展显示出卓越的光电特性。然而，到目前为止，已经使用金作为催化剂在气-液-固法中制备了六方IV族半导体。在这封信中，我们展示了使用分子束外延在自辅助 GaAs 纳米线上合成六方 Ge。通过精确调整 Ga 和 As 分子束通量，我们选择了生长过程中 GaAs NW 的立方或六方晶相。获得了具有高结构质量且没有任何可见缺陷的 500 nm 长的 Ge 六边形段，并且我们使用扫描透射电子显微镜表明 Ge 保持了核的晶相。最后，X 射线光电子能谱揭示了 Ge 中 As 的强烈结合。这项研究证明了在无金方法中首次生长六方 Ge，集成在硅衬底上。

更新日期：2022-01-05

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