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Fluorinated Phthalonitrile Resin with Excellent Thermal Stability and Low Dielectric Constant for High-Frequency Electronic Packaging
Macromolecular Materials and Engineering ( IF 4.2 ) Pub Date : 2021-11-25 , DOI: 10.1002/mame.202100651 Minjie Wu 1 , Yuxuan Gu 1 , Diyi Hao 1 , Xinggang Chen 2 , Xiaoyan Yu 1 , Qingxin Zhang 1
Macromolecular Materials and Engineering ( IF 4.2 ) Pub Date : 2021-11-25 , DOI: 10.1002/mame.202100651 Minjie Wu 1 , Yuxuan Gu 1 , Diyi Hao 1 , Xinggang Chen 2 , Xiaoyan Yu 1 , Qingxin Zhang 1
Affiliation
Phthalonitrile (PN) resin promising material for preparing high-speed and high-frequency electronic packaging because of its unique hightemperature resistance and excellent insulation performance. A fluorinated PN oligomer (4,4’-bis (p-perfluoro-phenol-(bis(p-phenol)perflouoropropane-2,2-diyl)-p-oxy-diphthalonitrile) (PFDP)) containing trifluoromethyl and decafluorobiphenyl groups are designed, synthesized, and characterized. The oligomer is blended with 4-(aminophenoxy) phthalonitrile (APPH), and then cured into polymers under the temperature-programmed process. The reactive blend has good processability, and structures of isoindole, triazine ring, and phthalocyanine ring are found in the curing reactions. The fluorinated PN (P-380) shows outstanding thermal stability and mechanical properties (5% thermal degradation temperature: 518 °C (N2); 516 (Air), THeat-resistance index: 268 °C, activation energy of thermal decomposition: 334.89 kJ mol−1, glass transition temperature (Tg) > 400 °C). Meanwhile, the fluorinated PN simultaneously exhibited a superior low dielectric constant (Dk, 2.21) and dielectric loss (Df, 0.01) at 10 GHz. Moreover, the water absorption of the resin is as low as 0.74%, which meets the requirement of dielectric materials. These results would strongly suggest such PFDP PN resin as excellent packaging materials in those high-tech applications such as aerospace and communication electronic devices.
中文翻译:
用于高频电子封装的具有优异热稳定性和低介电常数的氟化邻苯二甲腈树脂
邻苯二甲腈(PN)树脂因其独特的耐高温性和优异的绝缘性能而成为制备高速高频电子封装的理想材料。一种氟化 PN 低聚物 (4,4'-bis ( p -perfluoro-phenol- (bis( p -phenol)perflouoropropane-2,2-diyl)- p设计、合成和表征了含有三氟甲基和十氟联苯基的-oxy-diphthalonitrile) (PFDP))。该低聚物与 4-(氨基苯氧基) 邻苯二甲腈 (APPH) 共混,然后在程序升温过程中固化成聚合物。该反应混合物具有良好的加工性能,在固化反应中发现异吲哚、三嗪环和酞菁环结构。氟化 PN (P-380) 具有出色的热稳定性和机械性能(5% 热降解温度:518 °C (N 2 );516(空气),T耐热指数:268 °C,热分解活化能: 334.89 kJ mol -1 , 玻璃化转变温度 ( Tg) > 400 °C)。同时,氟化 PN 在 10 GHz 时同时表现出优异的低介电常数 ( D k , 2.21) 和介电损耗 ( D f , 0.01)。并且树脂的吸水率低至0.74%,满足介电材料的要求。这些结果强烈表明这种 PFDP PN 树脂在航空航天和通信电子设备等高科技应用中是优秀的封装材料。
更新日期:2021-11-25
中文翻译:
用于高频电子封装的具有优异热稳定性和低介电常数的氟化邻苯二甲腈树脂
邻苯二甲腈(PN)树脂因其独特的耐高温性和优异的绝缘性能而成为制备高速高频电子封装的理想材料。一种氟化 PN 低聚物 (4,4'-bis ( p -perfluoro-phenol- (bis( p -phenol)perflouoropropane-2,2-diyl)- p设计、合成和表征了含有三氟甲基和十氟联苯基的-oxy-diphthalonitrile) (PFDP))。该低聚物与 4-(氨基苯氧基) 邻苯二甲腈 (APPH) 共混,然后在程序升温过程中固化成聚合物。该反应混合物具有良好的加工性能,在固化反应中发现异吲哚、三嗪环和酞菁环结构。氟化 PN (P-380) 具有出色的热稳定性和机械性能(5% 热降解温度:518 °C (N 2 );516(空气),T耐热指数:268 °C,热分解活化能: 334.89 kJ mol -1 , 玻璃化转变温度 ( Tg) > 400 °C)。同时,氟化 PN 在 10 GHz 时同时表现出优异的低介电常数 ( D k , 2.21) 和介电损耗 ( D f , 0.01)。并且树脂的吸水率低至0.74%,满足介电材料的要求。这些结果强烈表明这种 PFDP PN 树脂在航空航天和通信电子设备等高科技应用中是优秀的封装材料。