The cylindrical Sn: β-Ga₂O₃ crystal with high crystalline quality was successfully designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped with a cylindrical Iridium die. The challenges for the growth of Sn: β-Ga₂O₃ crystals were overcome by optimizing the design of an afterheater. The growth morphology of cylindrical β-Ga₂O₃ crystal was studied using a theoretical model and the results from experimental crystal growth. The order of importance of growth conditions affecting β-Ga₂O₃ crystal growth morphology was examined, based on the morphological features of cylindrical β-Ga₂O₃ crystals obtained by the EFG and Czochralski methods. The iridium inclusions with three shapes were observed in bulk β-Ga₂O₃ crystal, and the formation mechanism was carefully discussed. The optical bandgap and valence band maximum (VBM) of Sn: β-Ga₂O₃ crystal were calculated to be 4.74 eV and 3.49 eV by absorption spectra and X-ray photoelectron spectroscopy (XPS), respectively. The corresponding surface barrier height (Φ_surf) was 1.25 eV. The carrier concentration of 5.95 × 10¹⁸ cm⁻³ was characterized by capacitance-voltage (C-V) measurement. By the Hall measurement, the carrier mobility and resistivity were estimated to be around 51 cm² V⁻¹ s⁻¹ and 3.55 × 10^–2 Ω cm, respectively.

具有高结晶质量的圆柱形 Sn: β -Ga ₂ O ₃晶体通过配备圆柱形铱模具的创新边缘定义薄膜生长 (EFG) 方法成功设计和生长。通过优化后加热器的设计，克服了Sn: β -Ga ₂ O ₃晶体生长的挑战。使用理论模型和实验晶体生长的结果研究了圆柱形β- Ga ₂ O ₃晶体的生长形态。影响β -Ga ₂ O ₃的生长条件的重要性顺序基于通过 EFG 和 Czochralski 方法获得的圆柱形β -Ga ₂ O ₃晶体的形态特征，检查了晶体生长形态。在块状β- Ga ₂ O ₃晶体中观察到三种形状的铱夹杂物，并仔细讨论了其形成机制。通过吸收光谱和X射线光电子能谱(XPS)计算出Sn: β- Ga ₂ O ₃晶体的光学带隙和价带最大值(VBM)分别为4.74 eV和3.49 eV。对应的表面势垒高度（Φ _surf) 为 1.25 eV。5.95 × 10 ¹⁸ cm ^-3的载流子浓度通过电容-电压（CV）测量表征。通过霍尔测量，载流子迁移率和电阻率估计分别约为 51 cm ² V ^-1 s ^-1和 3.55 × 10 ^–2 Ω cm。