Ceramics International ( IF 5.1 ) Pub Date : 2021-11-09 , DOI: 10.1016/j.ceramint.2021.11.058 Peng Wang 1, 2 , Daoqian Li 1, 2 , Jiawei Meng 1, 2 , Chuncheng Wei 1, 2 , Shuang Li 3 , Xin Geng 1, 2 , Haibin Sun 1 , Xiaowei Li 1, 2 , Yun Wu 1, 2 , Guangwu Wen 1, 2
To investigate the silicon/graphite ratio and temperature on preparation and properties of ZrB2–SiC coatings, ZrB2, silicon, and graphite powders were used as pack powders to prepare ZrB2–SiC coatings on SiC coated graphite samples at different temperatures by pack cementation method. The composition, microstructure, thermal shock, and oxidation resistance of these coatings were characterized and assessed. High silicon/graphite ratio (in this case, 2) did not guarantee higher coating density, instead could be harmful to coating formation and led to the lump of pack powders, especially at temperatures of 2100 and 2200 °C. But residual silicon in the coating is beneficial for high density and oxidation protection ability. The SiC/ZrB2–SiC (ZS50-2) coating prepared at 2000 °C showed excellent oxidation protective ability, owing to the residual silicon in the coating and dense coating structure. The weight loss of ZS50-2 after 15 thermal shocks between 1500 °C and room temperature, and oxidation for 19 h at 1500 °C are 6.5% and 2.9%, respectively.
中文翻译:
硅/石墨比和温度对充填法制备的 SiC/ZrB2-SiC 涂层氧化保护性能的影响
为了研究硅/石墨比和温度对 ZrB 2 -SiC 涂层的制备和性能的影响,以 ZrB 2、硅和石墨粉为填料,在不同温度的 SiC 涂层石墨样品上按填料制备 ZrB 2 -SiC 涂层。胶结法。对这些涂层的组成、微观结构、热冲击和抗氧化性进行了表征和评估。高硅/石墨比(在这种情况下为 2)并不能保证更高的涂层密度,反而可能对涂层形成有害并导致粉末结块,尤其是在 2100 和 2200 °C 的温度下。但涂层中残留的硅有利于高密度和抗氧化能力。SiC/ZrB 2– SiC (ZS50-2) 涂层在 2000 ℃ 制备,由于涂层中残留的硅和致密的涂层结构,表现出优异的氧化保护能力。ZS50-2 在 1500°C 和室温之间 15 次热冲击和 1500°C 氧化 19 h 后的重量损失分别为 6.5% 和 2.9%。