At present, the diamond wire sawing technology has been widely used in the slicing of photovoltaic multi-crystal silicon (mc-Si). The diameter of diamond saw wire becomes smaller and smaller, and the surface abrasive density and sawing process parameters affect the sawing characteristics of mc-Si wafer. In this paper, the sawing experiment of photovoltaic mc-Si with fine diameter electroplated diamond saw wire was carried out, and the effects of abrasive density and sawing process parameters on the sawing characteristics were analyzed. The results show that the cutting ability and sawing efficiency of diamond wire increase with the increase of surface abrasive density. However, too large surface abrasive density is easy to cause the accumulation of abrasives and the reduction of chip holding space. The core wire diameter is 60 μm and the surface fixed abrasives size is 8–10 μm, when the surface abrasive density is 200–300 grit/mm, the saw wire has relatively good sawing characteristics. The area formed by the material ductile removal domain accounts for a large proportion of the sawn surface, and the surface roughness and subsurface microcrack damage depth (SSD) of silicon wafer are lower. The surface quality of as-sawn wafer can be improved by decreasing the feed speed of workpiece and increasing the wire speed. The research results can provide a reference for the optimization of diamond wire sawing process of photovoltaic mc-Si cells.

目前，金刚石线锯技术已广泛应用于光伏多晶硅（mc-Si）的切片。金刚石锯线的直径越来越小，表面磨料密度和锯切工艺参数影响mc-Si晶片的锯切特性。本文采用细直径电镀金刚石锯线对光伏多晶硅进行了锯切实验，分析了磨料密度和锯切工艺参数对锯切特性的影响。结果表明，金刚石线的切割能力和锯切效率随着表面磨料密度的增加而增加。但是，过大的表面磨料密度容易造成磨料的堆积和切屑容纳空间的减少。芯线直径为60 μm，表面固定磨料粒度为8-10 μm，当表面磨料密度为200-300 grit/mm时，锯线具有较好的锯切特性。材料韧性去除域形成的面积占锯切面的比例很大，硅片的表面粗糙度和亚表面微裂纹损伤深度（SSD）较低。降低工件进给速度和提高焊丝速度可以提高锯切后的晶片表面质量。研究结果可为光伏多晶硅电池金刚石线锯工艺优化提供参考。材料韧性去除域形成的面积占锯切面的比例很大，硅片的表面粗糙度和亚表面微裂纹损伤深度（SSD）较低。降低工件进给速度和提高焊丝速度可以提高锯切后的晶片表面质量。研究结果可为光伏多晶硅电池金刚石线锯工艺优化提供参考。材料韧性去除域形成的面积占锯切面的比例很大，硅片的表面粗糙度和亚表面微裂纹损伤深度（SSD）较低。降低工件进给速度和提高焊丝速度可以提高锯切后的晶片表面质量。研究结果可为光伏多晶硅电池金刚石线锯工艺的优化提供参考。