当前位置：
X-MOL 学术
›
Small Methods
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Recent Progress in the Transfer of Graphene Films and Nanostructures
Small Methods ( IF 10.7 ) Pub Date : 2021-11-05 , DOI: 10.1002/smtd.202100771 Yanjing Gao 1 , Jielin Chen 1 , Guorui Chen 2 , Chunhai Fan 1 , Xiaoguo Liu 1
Small Methods ( IF 10.7 ) Pub Date : 2021-11-05 , DOI: 10.1002/smtd.202100771 Yanjing Gao 1 , Jielin Chen 1 , Guorui Chen 2 , Chunhai Fan 1 , Xiaoguo Liu 1
Affiliation
|
The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.
中文翻译：
石墨烯薄膜和纳米结构转移的最新进展
一个原子厚的石墨烯具有优异的电子、光学、热学和机械性能。目前，化学气相沉积 (CVD) 石墨烯受到了极大的关注，因为它提供了获得大面积、均匀的高质量薄膜的途径。这允许为实际应用制造基于石墨烯的电子、传感器、光子学和光电子学。然而，零带隙限制了石墨烯薄膜作为电子晶体管的应用。最常用的自下而上的方法通过定制明确定义的石墨烯纳米结构实现了电子带隙的有效调整。石墨烯薄膜/纳米结构向特定基材的生长后转移对于在适用设备中利用石墨烯至关重要。在这篇综述中，首先介绍了 CVD 石墨烯的基本生长机制。然后，介绍了将生长的石墨烯转移到目标基板的各种转移方法的最新进展。还提供了石墨烯纳米结构的制备和转移方法，然后总结了与转移相关的应用。最后，讨论了具有挑战性的问题和潜在的无转移方法。
更新日期：2021-11-07
中文翻译：
石墨烯薄膜和纳米结构转移的最新进展
一个原子厚的石墨烯具有优异的电子、光学、热学和机械性能。目前，化学气相沉积 (CVD) 石墨烯受到了极大的关注，因为它提供了获得大面积、均匀的高质量薄膜的途径。这允许为实际应用制造基于石墨烯的电子、传感器、光子学和光电子学。然而，零带隙限制了石墨烯薄膜作为电子晶体管的应用。最常用的自下而上的方法通过定制明确定义的石墨烯纳米结构实现了电子带隙的有效调整。石墨烯薄膜/纳米结构向特定基材的生长后转移对于在适用设备中利用石墨烯至关重要。在这篇综述中，首先介绍了 CVD 石墨烯的基本生长机制。然后，介绍了将生长的石墨烯转移到目标基板的各种转移方法的最新进展。还提供了石墨烯纳米结构的制备和转移方法，然后总结了与转移相关的应用。最后，讨论了具有挑战性的问题和潜在的无转移方法。
京公网安备 11010802027423号