Impurity Removal Leading to High-Performance CoSb3-Based Skutterudites with Synergistic Carrier Concentration Optimization and Thermal Conductivity Reduction,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Impurity Removal Leading to High-Performance CoSb3-Based Skutterudites with Synergistic Carrier Concentration Optimization and Thermal Conductivity Reduction
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-11-04 , DOI: 10.1021/acsami.1c16622
Xu-Guang Li ₁ , Wei-Di Liu ₂ , Shuang-Ming Li ₁ , Dou Li ₁ , Hong Zhong ₁ , Zhi-Gang Chen _{2,

3}

Affiliation

Thermoelectric properties of CoSb₃-based skutterudites are greatly determined by the removal of detrimental impurities, such as (Fe/Co)Sb₂, (Fe/Co)Sb, and Sb. In this study, we use a facile temperature gradient zone melting (TGZM) method to synthesize high-performance CoSb₃-based skutterudites by impurity removal. After removing metallic or semimetallic impurities (Fe/Co)Sb, (Fe/Co)Sb₂, and Sb, the carrier concentration of TGZM-Ce_0.75Fe₃CoSb₁₂ can be reduced to 1.21 × 10²⁰ cm^–3 and the electronic thermal conductivity dramatically reduced to 0.7 W m^–1 K^–1 at 693 K. Additionally, removing these impurities also effectively reduces the lattice thermal conductivity from 7.2 W m^–1 K^–1 of cast-Ce_0.75Fe₃CoSb₁₂ to 1.02 W m^–1 K^–1 of TGZM-Ce_0.75Fe₃CoSb₁₂ at 693 K. As a consequence, TGZM-Ce_0.75Fe₃CoSb₁₂ approaches a high power factor of 11.7 μW cm^–1 K^–2 and low thermal conductivity of 1.72 W m^–1 K^–1 at 693 K, leading to a peak zT of 0.48 at 693 K, which is 10 times higher than that of cast-Ce_0.75Fe₃CoSb₁₂. This study indicates that our facile TGZM method can effectively synthesize high-performance CoSb₃-based skutterudites by impurity removal and set up a solid foundation for further development.

中文翻译：

通过协同优化载流子浓度和降低热导率，去除杂质导致高性能 CoSb3 基方钴矿

CoSb ₃基方钴矿的热电特性很大程度上取决于有害杂质的去除，例如(Fe/Co)Sb ₂、(Fe/Co)Sb 和Sb。在本研究中，我们使用简便的温度梯度区熔化 (TGZM) 方法通过去除杂质来合成高性能 CoSb ₃基方钴矿。去除金属或半金属杂质(Fe/Co)Sb、(Fe/Co)Sb ₂和Sb后，TGZM-Ce _0.75 Fe ₃ CoSb ₁₂的载流子浓度可降低至1.21 × 10 ²⁰ cm ^–3和电子热导率显着降低至 0.7 W m ^–1 K ^–1在 693 K。此外，去除这些杂质还有效地将晶格热导率从 7.2 W m ^–1 K ^–1的 Cast-Ce _0.75 Fe ₃ CoSb _{12 降低}到 1.02 W m ^–1 K ^–1的 TGZM-Ce _0.75 Fe ₃的CoSb ₁₂在693 K.因此，温度梯度区熔铈_0.75的Fe ₃的CoSb ₁₂接近11.7μWcm的高功率因数^-1 ķ ^-2和1.72女男低热导率^-1 ķ ^-1在693 K，导致达到峰值zT在 693 K 时为 0.48，是铸造 Ce _0.75 Fe ₃ CoSb _{12 的}10 倍。该研究表明，我们简便的 TGZM 方法可以通过去除杂质有效地合成高性能 CoSb ₃基方钴矿，为进一步开发奠定了坚实的基础。

更新日期：2021-11-17

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南