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Atomically Thin Materials for Next-Generation Rechargeable Batteries
Chemical Reviews ( IF 51.4 ) Pub Date : 2021-10-28 , DOI: 10.1021/acs.chemrev.1c00636
Ding Yuan 1 , Yuhai Dou 1, 2 , Zhenzhen Wu 1 , Yuhui Tian 1, 3 , Kai-Hang Ye 4 , Zhan Lin 4 , Shi Xue Dou 5 , Shanqing Zhang 1
Affiliation  

Atomically thin materials (ATMs) with thicknesses in the atomic scale (typically <5 nm) offer inherent advantages of large specific surface areas, proper crystal lattice distortion, abundant surface dangling bonds, and strong in-plane chemical bonds, making them ideal 2D platforms to construct high-performance electrode materials for rechargeable metal-ion batteries, metal-sulfur batteries, and metal-air batteries. This work reviews the synthesis and electronic property tuning of state-of-the-art ATMs, including graphene and graphene derivatives (GE/GO/rGO), graphitic carbon nitride (g-C3N4), phosphorene, covalent organic frameworks (COFs), layered transition metal dichalcogenides (TMDs), transition metal carbides, carbonitrides, and nitrides (MXenes), transition metal oxides (TMOs), and metal-organic frameworks (MOFs) for constructing next-generation high-energy-density and high-power-density rechargeable batteries to meet the needs of the rapid developments in portable electronics, electric vehicles, and smart electricity grids. We also present our viewpoints on future challenges and opportunities of constructing efficient ATMs for next-generation rechargeable batteries.

中文翻译:

用于下一代可充电电池的原子薄材料

原子级厚度(通常小于 5 nm)的原子薄材料 (ATM) 具有比表面积大、晶格畸变适当、表面悬空键丰富和面内化学键强等固有优势,使其成为理想的二维平台为可充电金属离子电池、金属硫电池和金属空气电池构建高性能电极材料。这项工作回顾了最先进的 ATM 的合成和电子特性调整,包括石墨烯和石墨烯衍生物 (GE/GO/rGO)、石墨碳氮化物 (gC 3 N 4)、磷烯、共价有机骨架 (COF)、层状过渡金属二硫属化物 (TMD)、过渡金属碳化物、碳氮化物和氮化物 (MXene)、过渡金属氧化物 (TMO) 和金属有机骨架 (MOF),用于构建下一代生产高能量密度和高功率密度的可充电电池,以满足便携式电子产品、电动汽车和智能电网快速发展的需求。我们还就为下一代可充电电池构建高效 ATM 的未来挑战和机遇提出了我们的观点。
更新日期:2021-10-28
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