Controllable and efficient construction of oxygen vacancies on the surface of metal oxide semiconductors (MOSs) is essential for their application in the gas sensor. Herein, a general H₂ reduction method is developed to synthesize SnO₂ with oxygen vacancies defect (SnO₂-D) by annealing the SnO₂ in a H₂ atmosphere at different temperature (300 °C, 400 °C and 500 °C), and then named SnO₂-D3, SnO₂-D4 and SnO₂-D5, respectively. It was found that although the determined specific surface areas for pristine SnO₂, SnO₂-D3, SnO₂-D4 and SnO₂-D5 are 103.749 m²g⁻¹, 63.316 m²g⁻¹, 47.652 m²g⁻¹ and 15.541 m²g⁻¹, respectively, the gas sensitivity test results indicate that the SnO₂-D4 Micro-Electro-Mechanical System (MEMS) sensor shows improved response and excellent low-concentration detection capability (down to 0.1 ppm) to H₂ compared with that fabricated with pristine SnO₂, SnO₂-D3 and SnO₂-D5. The abnormal relationship between specific surface area and gas sensing performance is attributed to the more oxygen vacancies of SnO₂-D4 surface. In addition, ZnO (ZnO-D) and In₂O₃ (In₂O₃-D) with oxygen vacancy defects based on the H₂ reduction method show better gas sensitivity than ZnO and In₂O₃ sensors, which further proves that oxygen vacancy defects can effectively improve the gas-sensing performance of MOSs.

在金属氧化物半导体 (MOS) 表面上可控且有效地构建氧空位对其在气体传感器中的应用至关重要。在此，一般的ħ ₂还原方法进行显影，以合成的SnO ₂与氧空位缺陷（SNO ₂通过退火的SnO-D）₂再在H ₂在不同温度下（300℃，400℃和500℃）的气氛，然后分别命名为 SnO ₂ -D3、SnO ₂ -D4 和 SnO ₂ -D5。发现虽然原始 SnO ₂、SnO ₂ -D3、SnO ₂ -D4 和 SnO ₂的测定比表面积-D5分别为103.749 m ² g ^-1、63.316 m ² g ^-1、47.652 m ² g ^-1和15.541 m ² g ^-1，气敏试验结果表明SnO ₂ -D4微机电与使用原始 SnO ₂、SnO ₂ -D3 和 SnO ₂ -D5制造的传感器相比，系统 (MEMS) 传感器对 H ₂显示出改进的响应和出色的低浓度检测能力（低至 0.1 ppm）。比表面积与气敏性能之间的异常关系归因于SnO ₂的更多氧空位-D4 表面。此外，基于H ₂还原法的具有氧空位缺陷的ZnO (ZnO-D) 和In ₂ O ₃ (In ₂ O ₃ -D)表现出比ZnO 和In ₂ O ₃传感器更好的气体灵敏度，这进一步证明了氧空位缺陷可以有效提高MOS的气敏性能。