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Band Gap Engineering in β-Ga2O3 for a High-Performance X-ray Detector
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-10-18 , DOI: 10.1021/acsaelm.1c00778 Zhiwei Li 1 , Jiawen Chen 1 , Huili Tang 1 , Zhichao Zhu 1 , Mu Gu 1 , Jun Xu 1 , Liang Chen 2 , Xiaoping Ouyang 2 , Bo Liu 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-10-18 , DOI: 10.1021/acsaelm.1c00778 Zhiwei Li 1 , Jiawen Chen 1 , Huili Tang 1 , Zhichao Zhu 1 , Mu Gu 1 , Jun Xu 1 , Liang Chen 2 , Xiaoping Ouyang 2 , Bo Liu 1
Affiliation
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Gallium oxide (Ga2O3) attracts great attention in the field of X-ray detection because of its ultrawide band gap, high breakdown electric field, and high X-ray absorption coefficient. However, unintentionally doped Ga2O3 tends to have low resistivity because of the shallow donors provided by unintentionally doped impurity elements or intrinsic defects. Iron and magnesium ion doping can increase the resistivity of β-Ga2O3, but the carrier drift length and carrier collection efficiency are greatly reduced because of the introduction of deep-level impurities. Here, Al-doped β-Ga2O3 (β-Ga2O3:Al) single crystals with high resistivity are obtained through band gap engineering. The mechanism by which Al3+ doping can increase the resistivity of the β-Ga2O3 crystal is discussed. A β-Ga2O3:15%Al-based X-ray detector with high resistivity and quality is prepared. The detector demonstrates a high sensitivity of 851.6 μC Gyair–1 cm–2, which is 42 times higher than that of the commercial amorphous Se X-ray detector. Furthermore, the detector exhibits a fast response speed and both rise time and decay time of less than 0.05 s. The high performance of the detector is attributed to the high resistivity and high quality of the crystal. This work presents a method to obtain high-performance X-ray detectors based on β-Ga2O3 single crystals through band gap engineering.
中文翻译：
用于高性能 X 射线探测器的 β-Ga2O3 中的带隙工程
氧化镓(Ga 2 O 3 )因其超宽带隙、高击穿电场和高X射线吸收系数而在X射线检测领域备受关注。然而，由于无意掺杂的杂质元素或本征缺陷提供浅施主，无意掺杂的Ga 2 O 3往往具有低电阻率。铁和镁离子掺杂可以提高β-Ga 2 O 3的电阻率，但由于引入了深能级杂质，载流子漂移长度和载流子收集效率大大降低。这里，Al掺杂的β-Ga 2 O 3 (β-Ga 2 O 3:Al) 具有高电阻率的单晶是通过带隙工程获得的。讨论了Al 3+掺杂提高β-Ga 2 O 3晶体电阻率的机理。制备了具有高电阻率和质量的β-Ga 2 O 3 :15%Al基X射线探测器。探测器表现出 851.6 μC Gy空气–1 cm –2的高灵敏度，比商用非晶硒 X 射线探测器高 42 倍。此外，该探测器具有快速响应速度，上升时间和衰减时间均小于 0.05 s。探测器的高性能归功于晶体的高电阻率和高质量。这项工作提出了一种通过带隙工程获得基于 β-Ga 2 O 3单晶的高性能 X 射线探测器的方法。
更新日期：2021-10-26
中文翻译：
用于高性能 X 射线探测器的 β-Ga2O3 中的带隙工程
氧化镓(Ga 2 O 3 )因其超宽带隙、高击穿电场和高X射线吸收系数而在X射线检测领域备受关注。然而，由于无意掺杂的杂质元素或本征缺陷提供浅施主，无意掺杂的Ga 2 O 3往往具有低电阻率。铁和镁离子掺杂可以提高β-Ga 2 O 3的电阻率，但由于引入了深能级杂质，载流子漂移长度和载流子收集效率大大降低。这里，Al掺杂的β-Ga 2 O 3 (β-Ga 2 O 3:Al) 具有高电阻率的单晶是通过带隙工程获得的。讨论了Al 3+掺杂提高β-Ga 2 O 3晶体电阻率的机理。制备了具有高电阻率和质量的β-Ga 2 O 3 :15%Al基X射线探测器。探测器表现出 851.6 μC Gy空气–1 cm –2的高灵敏度，比商用非晶硒 X 射线探测器高 42 倍。此外，该探测器具有快速响应速度，上升时间和衰减时间均小于 0.05 s。探测器的高性能归功于晶体的高电阻率和高质量。这项工作提出了一种通过带隙工程获得基于 β-Ga 2 O 3单晶的高性能 X 射线探测器的方法。
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