Zirconia atomic layer deposition (ALD) using zirconium 2-methyl 2-butoxide (ZMB) and ethanol is reported for the first time. The process selectively deposits a uniform ZrO₂ film on silicon with a high deposition rate (∼2 Å/cycle), without any deposition on copper at a relatively low temperature (200 °C) and up to at least 200 cycles. This is the largest thickness of inherently surface selective ZrO₂ ALD ever reported (∼400 Å) and is at least 10 times more selective than that achieved using a similar deposition process but with a different precursor, tris(dimethylamino)cyclopentadienyl Zirconium (ZyALD™). The selectively deposited ZrO₂ films were characterized using spectral ellipsometry, X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), atomic force microscopy and energy dispersive spectroscopy obtained during scanning electron microscopy and scanning transmission electron microscopy. Surface characterization techniques employed here confirmed the chemical nature and topography of the deposited ZrO₂, whereas EXAFS showed the ZrO₂ to be amorphous on silicon having local bonding structure similar to that of ZrO₂ deposited with ZyALD™ precursor.

首次报道了使用2-甲基2-丁醇锆(ZMB) 和乙醇的氧化锆原子层沉积 (ALD) 。该工艺以高沉积速率（~2 Å/循环）选择性地在硅上沉积均匀的 ZrO ₂膜，而在相对较低的温度（200°C）和至少 200 次循环下不会在铜上进行任何沉积。这是迄今为止报道的最大厚度的固有表面选择性 ZrO ₂ ALD（~400 Å），并且比使用类似沉积工艺但使用不同前体三（二甲氨基）环戊二烯基锆 (ZyALD™)实现的选择性至少高 10 倍）。选择性沉积的 ZrO ₂使用光谱椭偏仪、X 射线光电子能谱、扩展 X 射线吸收精细结构光谱 (EXAFS)、原子力显微镜和在扫描电子显微镜和扫描透射电子显微镜中获得的能量色散光谱对薄膜进行表征。这里采用的表面表征技术证实了沉积的 ZrO ₂的化学性质和形貌，而 EXAFS 显示 ZrO ₂在硅上是无定形的，具有类似于用 ZyALD™ 前体沉积的 ZrO _{2 的}局部键合结构。