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Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction
ACS Nano ( IF 15.8 ) Pub Date : 2021-10-04 , DOI: 10.1021/acsnano.1c06567 Yuehui Wang 1 , Haoran Li 1 , Jia Cao 2 , Jiaying Shen 1 , Qingyi Zhang 1 , Yongtao Yang 1 , Zhengang Dong 1 , Tianhong Zhou 3 , Yang Zhang 3 , Weihua Tang 1 , Zhenping Wu 1
ACS Nano ( IF 15.8 ) Pub Date : 2021-10-04 , DOI: 10.1021/acsnano.1c06567 Yuehui Wang 1 , Haoran Li 1 , Jia Cao 2 , Jiaying Shen 1 , Qingyi Zhang 1 , Yongtao Yang 1 , Zhengang Dong 1 , Tianhong Zhou 3 , Yang Zhang 3 , Weihua Tang 1 , Zhenping Wu 1
Affiliation
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Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga2O3 are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga2O3 or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga2O3-based APDs exhibits an ultrahigh responsivity of 5.9 × 104 A/W, specific detectivity of 1.8 × 1014 Jones, and an external quantum efficiency up to 2.9 × 107% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 104, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga2O3-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga2O3 as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga2O3 promises greater design freedom for realization of wide applications of emerging semiconductor Ga2O3 with even better performance since relieving the burden on the integration progress.
中文翻译：
使用基于非晶 Ga2O3 的异质结的超高增益日盲雪崩光电探测器
截止波长在 200-280 nm 范围内的日盲光电探测器因其潜在的民用和军用应用而备受关注。基于宽带隙半导体 Ga 2 O 3形成的雪崩光电探测器 (APD)有望满足新兴技术需求。然而，这些器件受到与生长的 Ga 2 O 3的质量或减轻缺陷和位错的困难相关的限制。在此，在室温下可靠地制造了以非晶Ga 2 O 3 (a-Ga 2 O 3 )/ITO异质结为中心元件的高性能APD 。a-Ga基于2 O 3的 APD 具有 5.9 × 10 4 A/W的超高响应度、1.8 × 10 14 Jones 的比探测率以及在 40 V 反向偏压下 254 nm 光照射下的外部量子效率高达 2.9 × 10 7 % . 值得注意的是，增益可以达到6.8 × 10 4，表明其具有出色的超弱信号检测能力。a-Ga 2 O 3基APDs的综合优越性能可归因于a-Ga 2 O 3 中固有的载流子传输方式以及异质结处的改进带对齐。低处理温度和a-Ga 2 O 3 的优异特性之间的权衡保证了更大的设计自由度，以实现新兴半导体Ga 2 O 3的广泛应用，并且由于减轻了集成进程的负担，因此具有更好的性能。
更新日期：2021-10-26
中文翻译：
使用基于非晶 Ga2O3 的异质结的超高增益日盲雪崩光电探测器
截止波长在 200-280 nm 范围内的日盲光电探测器因其潜在的民用和军用应用而备受关注。基于宽带隙半导体 Ga 2 O 3形成的雪崩光电探测器 (APD)有望满足新兴技术需求。然而，这些器件受到与生长的 Ga 2 O 3的质量或减轻缺陷和位错的困难相关的限制。在此，在室温下可靠地制造了以非晶Ga 2 O 3 (a-Ga 2 O 3 )/ITO异质结为中心元件的高性能APD 。a-Ga基于2 O 3的 APD 具有 5.9 × 10 4 A/W的超高响应度、1.8 × 10 14 Jones 的比探测率以及在 40 V 反向偏压下 254 nm 光照射下的外部量子效率高达 2.9 × 10 7 % . 值得注意的是，增益可以达到6.8 × 10 4，表明其具有出色的超弱信号检测能力。a-Ga 2 O 3基APDs的综合优越性能可归因于a-Ga 2 O 3 中固有的载流子传输方式以及异质结处的改进带对齐。低处理温度和a-Ga 2 O 3 的优异特性之间的权衡保证了更大的设计自由度，以实现新兴半导体Ga 2 O 3的广泛应用，并且由于减轻了集成进程的负担，因此具有更好的性能。
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