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Impurity Gettering by Silicon Nitride Films: Kinetics, Mechanisms, and Simulation
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-10-01 , DOI: 10.1021/acsaem.1c01826 Tien T. Le 1 , Ziv Hameiri 2 , Thien N. Truong 1 , Zhongshu Yang 1 , Daniel Macdonald 1 , AnYao Liu 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-10-01 , DOI: 10.1021/acsaem.1c01826 Tien T. Le 1 , Ziv Hameiri 2 , Thien N. Truong 1 , Zhongshu Yang 1 , Daniel Macdonald 1 , AnYao Liu 1
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Metallic impurities in the silicon wafer bulk are one of the major efficiency-limiting factors in silicon solar cells. Gettering can be used to significantly lower the metal concentrations. Although gettering by silicon nitride films has been reported in literature, much remains unknown about its gettering behaviors and mechanisms. In this study, the gettering kinetics and mechanisms of silicon nitride films, from both plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD), are investigated. By monitoring the kinetics of iron loss from the silicon wafer bulk, it is confirmed that silicon nitride gettering takes place mainly via segregation, even at a low annealing temperature of 400 °C. Simulation of the gettering kinetics suggests the presence of an interfacial diffusion barrier in some cases, which slows down the transport of iron impurities from the silicon wafer bulk to the silicon nitride gettering regions. The activation energy of the segregation gettering process is estimated to be 0.9 ± 0.1 eV for the investigated PECVD silicon nitride film at 400–900 °C and 1.6 ± 0.5 eV for the investigated LPCVD silicon nitride film at 400–700 °C.
中文翻译：
氮化硅薄膜吸杂：动力学、机理和模拟
硅片体中的金属杂质是硅太阳能电池的主要效率限制因素之一。吸气可用于显着降低金属浓度。尽管文献中已经报道了氮化硅薄膜的吸气作用，但对其吸气行为和机制仍有很多未知。在这项研究中，研究了来自等离子体增强化学气相沉积 (PECVD) 和低压化学气相沉积 (LPCVD) 的氮化硅薄膜的吸气动力学和机制。通过监测硅片体铁损的动力学，证实氮化硅吸杂主要通过偏析，即使在 400 °C 的低退火温度下。吸杂动力学的模拟表明在某些情况下存在界面扩散势垒，这会减慢铁杂质从硅晶片体向氮化硅吸杂区域的传输。所研究的 PECVD 氮化硅膜在 400-900 °C 时分离吸气工艺的活化能估计为 0.9 ± 0.1 eV，所研究的 LPCVD 氮化硅膜在 400-700 °C 时估计为 1.6 ± 0.5 eV。
更新日期：2021-10-25
中文翻译：
氮化硅薄膜吸杂：动力学、机理和模拟
硅片体中的金属杂质是硅太阳能电池的主要效率限制因素之一。吸气可用于显着降低金属浓度。尽管文献中已经报道了氮化硅薄膜的吸气作用，但对其吸气行为和机制仍有很多未知。在这项研究中，研究了来自等离子体增强化学气相沉积 (PECVD) 和低压化学气相沉积 (LPCVD) 的氮化硅薄膜的吸气动力学和机制。通过监测硅片体铁损的动力学，证实氮化硅吸杂主要通过偏析，即使在 400 °C 的低退火温度下。吸杂动力学的模拟表明在某些情况下存在界面扩散势垒，这会减慢铁杂质从硅晶片体向氮化硅吸杂区域的传输。所研究的 PECVD 氮化硅膜在 400-900 °C 时分离吸气工艺的活化能估计为 0.9 ± 0.1 eV，所研究的 LPCVD 氮化硅膜在 400-700 °C 时估计为 1.6 ± 0.5 eV。
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