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Controllable Doping in 2D Layered Materials
Advanced Materials ( IF 27.4 ) Pub Date : 2021-09-27 , DOI: 10.1002/adma.202104942 Zhen Wang 1, 2 , Hui Xia 1, 2 , Peng Wang 1, 2 , Xiaohao Zhou 1, 2 , Chunsen Liu 3, 4 , Qinghua Zhang 5 , Fang Wang 1, 2 , Menglin Huang 3 , Shiyou Chen 3 , Peisong Wu 1, 2 , Yunfeng Chen 1, 2 , Jiafu Ye 1, 2 , Shenyang Huang 6 , Hugen Yan 6 , Lin Gu 5 , Jinshui Miao 1, 7 , Tianxin Li 1 , Xiaoshuang Chen 1, 7 , Wei Lu 1, 7 , Peng Zhou 3, 4 , Weida Hu 1, 2, 7
Advanced Materials ( IF 27.4 ) Pub Date : 2021-09-27 , DOI: 10.1002/adma.202104942 Zhen Wang 1, 2 , Hui Xia 1, 2 , Peng Wang 1, 2 , Xiaohao Zhou 1, 2 , Chunsen Liu 3, 4 , Qinghua Zhang 5 , Fang Wang 1, 2 , Menglin Huang 3 , Shiyou Chen 3 , Peisong Wu 1, 2 , Yunfeng Chen 1, 2 , Jiafu Ye 1, 2 , Shenyang Huang 6 , Hugen Yan 6 , Lin Gu 5 , Jinshui Miao 1, 7 , Tianxin Li 1 , Xiaoshuang Chen 1, 7 , Wei Lu 1, 7 , Peng Zhou 3, 4 , Weida Hu 1, 2, 7
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For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8Se1.2, PdSe2, and WSe2 is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications.
中文翻译：
二维分层材料中的可控掺杂
对于每一代半导体来说，掺杂技术的问题总是被放在优先事项列表的首位，因为它决定了一种材料是否可以用于电子和光电行业。当涉及到 2D 材料时，在将 2D 半导体可控地掺杂到 p 型或 n 型中方面已经发现了重大挑战，更不用说开发对该过程的连续控制了。在这里，2D 层状材料（如 PtSSe、PtS 0.8 Se 1.2、PdSe 2和 WSe 2 ）中独特的自调制掺杂特性被报道。不同数量的垂直堆叠单层是可控调整相同材料从 p 型到本征，再到 n 型掺杂的关键因素。重要的是，基于动态和热力学分析发现，厚度引起的晶格变形使 PtSSe 中的缺陷从 Pt 空位转移到阴离子空位，这分别导致 p 型和 n 型电导。通过厚度调制掺杂，WSe 2二极管具有4400的高整流比和0.38 V的大开路电压。同时，PtSSe探测器克服了窄带隙光电器件暗电流大的缺点。所有这些发现为基础科学研究和应用提供了一个全新的视角。
更新日期：2021-12-01
中文翻译：
二维分层材料中的可控掺杂
对于每一代半导体来说，掺杂技术的问题总是被放在优先事项列表的首位，因为它决定了一种材料是否可以用于电子和光电行业。当涉及到 2D 材料时，在将 2D 半导体可控地掺杂到 p 型或 n 型中方面已经发现了重大挑战，更不用说开发对该过程的连续控制了。在这里，2D 层状材料（如 PtSSe、PtS 0.8 Se 1.2、PdSe 2和 WSe 2 ）中独特的自调制掺杂特性被报道。不同数量的垂直堆叠单层是可控调整相同材料从 p 型到本征，再到 n 型掺杂的关键因素。重要的是，基于动态和热力学分析发现，厚度引起的晶格变形使 PtSSe 中的缺陷从 Pt 空位转移到阴离子空位，这分别导致 p 型和 n 型电导。通过厚度调制掺杂，WSe 2二极管具有4400的高整流比和0.38 V的大开路电压。同时，PtSSe探测器克服了窄带隙光电器件暗电流大的缺点。所有这些发现为基础科学研究和应用提供了一个全新的视角。
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