2D GaN for Highly Reproducible Surface Enhanced Raman Scattering,Small

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2D GaN for Highly Reproducible Surface Enhanced Raman Scattering
Small ( IF 13.0 ) Pub Date : 2021-09-27 , DOI: 10.1002/smll.202103442
Shasha Zhao ₁ , Huiliu Wang ₁ , Lixin Niu ₁ , Wenqi Xiong ₂ , Yunxu Chen ₁ , Mengqi Zeng ₁ , Shengjun Yuan ₂ , Lei Fu ₁

Affiliation

Surface-enhanced Raman scattering (SERS) based on 2D semiconductors has been rapidly developed due to their chemical stability and molecule-specific SERS activity. High signal reproducibility is urgently required towards practical SERS applications. 2D gallium nitride (GaN) with highly polar Ga–N bonds enables strong dipole–dipole interactions with the probe molecules, and abundant DOS (density of states) near its Fermi level increases the intermolecular charge transfer probability, making it a suitable SERS substrate. Herein, 2D micrometer-sized GaN crystals are demonstrated to be sensitive SERS platforms with excellent signal reproducibility and stability. Strong dipole–dipole interaction between the dye molecule and 2D GaN enhances the molecular polarizability. Furthermore, 2D GaN benefits its SERS enhancement by the combination of increased DOS and more efficient charge transfer resonances when compared with its bulk counterpart.

中文翻译：

用于高度可重复的表面增强拉曼散射的 2D GaN

基于二维半导体的表面增强拉曼散射 (SERS) 由于其化学稳定性和分子特异性 SERS 活性而得到迅速发展。实际 SERS 应用迫切需要高信号重现性。具有高极性 Ga-N 键的二维氮化镓 (GaN) 能够与探针分子产生强偶极-偶极相互作用，并且在其费米能级附近丰富的 DOS（态密度）增加了分子间电荷转移的概率，使其成为合适的 SERS 衬底。在此，2D 微米尺寸的 GaN 晶体被证明是具有出色信号再现性和稳定性的灵敏 SERS 平台。染料分子和二维 GaN 之间的强偶极-偶极相互作用增强了分子极化率。此外，

更新日期：2021-11-11

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