Ultra-thin GaAs solar cells with nanophotonic metal-dielectric diffraction gratings fabricated with displacement Talbot lithography,Progress in Photovoltaics

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Ultra-thin GaAs solar cells with nanophotonic metal-dielectric diffraction gratings fabricated with displacement Talbot lithography
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2021-09-23 , DOI: 10.1002/pip.3463
Larkin Sayre ₁ , Eduardo Camarillo Abad ₂ , Phoebe Pearce ₂ , Pierre Chausse ₃ , Pierre‐Marie Coulon ₃ , Philip Shields ₃ , Andrew Johnson ₄ , Louise C. Hirst _{1,

2}

Affiliation

Ultra-thin photovoltaics enable lightweight flexible form factors, suitable for emerging terrestrial applications such as electric vehicle integration. These devices also exhibit intrinsic radiation tolerance and increased specific power and so are uniquely enabling for space power applications, offering longer missions in hostile environments and reduced launch costs. In this work, a GaAs solar cell with an 80-nm absorber is developed with short circuit current exceeding the single pass limit. Integrated light management is employed to compensate for increased photon transmission inherent to ultra-thin absorbers, and efficiency enhancement of 68% over a planar on-wafer equivalent is demonstrated. This is achieved using a wafer-scale technique, displacement Talbot lithography, to fabricate a rear surface nanophotonic grating. Optical simulations definitively confirm Fabry-Perot and waveguide mode contributions to the observed increase in absorption and also demonstrate a pathway to short circuit current of 26 mA/cm², well in excess of the double pass limit.

中文翻译：

具有纳米光子金属介电衍射光栅的超薄 GaAs 太阳能电池，采用位移 Talbot 光刻技术制造

超薄光伏可实现轻巧灵活的外形尺寸，适用于新兴的地面应用，例如电动汽车集成。这些设备还表现出固有的辐射耐受性和更高的比功率，因此特别适用于太空动力应用，在恶劣的环境中提供更长的任务并降低发射成本。在这项工作中，开发了一种具有 80 纳米吸收剂的 GaAs 太阳能电池，短路电流超过了单程限制。采用集成光管理来补偿超薄吸收器固有的光子传输增加，并且证明了比平面晶圆等效物的效率提高了 68%。这是通过使用晶圆级技术、位移 Talbot 光刻技术来制造后表面纳米光子光栅来实现的。²、远远超过双关限制。

更新日期：2021-09-23

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