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Dendritic WS2 Nanocrystal-Coated Monolayer WS2 Nanosheet Heterostructures for Phototransistors
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2021-09-17 , DOI: 10.1021/acsanm.1c02568 Li Zhan 1, 2 , Jun Shen 1, 2 , Jiangbing Yan 1 , Ruiyang Yan 1, 2 , Xiaoxian Zhang 3 , Mingsheng Long 4 , Zheng Liu 5 , Xu Wang 1 , Shaohua Fu 3 , Li Zhang 4 , Hengqing Cui 1, 2 , Xin Zhang 1
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2021-09-17 , DOI: 10.1021/acsanm.1c02568 Li Zhan 1, 2 , Jun Shen 1, 2 , Jiangbing Yan 1 , Ruiyang Yan 1, 2 , Xiaoxian Zhang 3 , Mingsheng Long 4 , Zheng Liu 5 , Xu Wang 1 , Shaohua Fu 3 , Li Zhang 4 , Hengqing Cui 1, 2 , Xin Zhang 1
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Two-dimensional tungsten disulfide (WS2), as one of the widely concerned members of the transition metal dichalcogenides family, has been studied broadly by its outstanding photonic and electronic properties. Since all of the research works focus on size and the number of layers, the dendritic structure WS2 has been scarcely reported. In our study, we make use of atmospheric pressure chemical vapor deposition (APCVD) to control the synthesis of dendritic WS2/monolayer WS2 heterostructures on the SiO2/Si substrate. The stacking morphology of the heterostructure is verified by AFM, Raman, and PL spectra. The effects of growth times and carrier gas flux on the quasi-epitaxial growth of WS2 films with dendritic structures have been systematically studied. In addition, the transition between fractal, dendritic, and compact morphologies with the increase of the growth times (carrier gas flux) are more significant. The compact morphology and difference of contact potential between the adjacent dendritic structures are characterized by Kelvin probe force microscopy (KPFM). Moreover, the as-fabricated FET devices exhibit excellent electronic properties (on/off ratio, carrier mobility, photoresponsivity, and response time are about 106, 11.42 cm2 V–1S1–, 46.6 mA/W, and 105.5 μs, respectively). This study paves the way for the rational design of high-sensitivity fractal-enhanced phototransistor devices for industrial and commercial applications.
中文翻译：
用于光电晶体管的树枝状 WS2 纳米晶体涂层单层 WS2 纳米片异质结构
二维二硫化钨（WS 2）作为过渡金属二硫属化物家族中广受关注的成员之一，因其出色的光子和电子特性而被广泛研究。由于所有的研究工作都集中在尺寸和层数上，因此几乎没有报道过树枝状结构 WS 2。在我们的研究中，我们利用常压化学气相沉积 (APCVD) 来控制SiO 2 /Si 衬底上树枝状 WS 2 /单层 WS 2异质结构的合成。通过 AFM、拉曼和 PL 光谱验证了异质结构的堆叠形态。生长时间和载气流量对WS 2准外延生长的影响已经系统地研究了具有树枝状结构的薄膜。此外，随着生长时间（载气通量）的增加，分形、树枝状和致密形貌之间的转变更为显着。通过开尔文探针力显微镜 (KPFM) 表征了相邻树枝状结构之间的紧密形态和接触电位差异。此外，制造好的 FET 器件表现出优异的电子特性（开/关比、载流子迁移率、光响应性和响应时间约为 10 6 , 11.42 cm 2 V –1 S 1–、46.6 mA/W 和 105.5 μs）。该研究为合理设计用于工业和商业应用的高灵敏度分形增强型光电晶体管器件铺平了道路。
更新日期：2021-10-22
中文翻译：
用于光电晶体管的树枝状 WS2 纳米晶体涂层单层 WS2 纳米片异质结构
二维二硫化钨（WS 2）作为过渡金属二硫属化物家族中广受关注的成员之一，因其出色的光子和电子特性而被广泛研究。由于所有的研究工作都集中在尺寸和层数上，因此几乎没有报道过树枝状结构 WS 2。在我们的研究中，我们利用常压化学气相沉积 (APCVD) 来控制SiO 2 /Si 衬底上树枝状 WS 2 /单层 WS 2异质结构的合成。通过 AFM、拉曼和 PL 光谱验证了异质结构的堆叠形态。生长时间和载气流量对WS 2准外延生长的影响已经系统地研究了具有树枝状结构的薄膜。此外，随着生长时间（载气通量）的增加，分形、树枝状和致密形貌之间的转变更为显着。通过开尔文探针力显微镜 (KPFM) 表征了相邻树枝状结构之间的紧密形态和接触电位差异。此外，制造好的 FET 器件表现出优异的电子特性（开/关比、载流子迁移率、光响应性和响应时间约为 10 6 , 11.42 cm 2 V –1 S 1–、46.6 mA/W 和 105.5 μs）。该研究为合理设计用于工业和商业应用的高灵敏度分形增强型光电晶体管器件铺平了道路。
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