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Au/CdBr2/SiO2/Au Straddling-Type Heterojunctions Designed as Microwave Multiband Pass Filters, Negative Capacitance Transistors, and Current Rectifiers
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-09-16 , DOI: 10.1002/pssa.202100327 A. F. Qasrawi 1, 2 , Areen A. Hamarsheh 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-09-16 , DOI: 10.1002/pssa.202100327 A. F. Qasrawi 1, 2 , Areen A. Hamarsheh 1
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Herein, SiO2 nanosheets with thicknesses of 25−100 nm are used to enhance the performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling-type heterojunction devices are prepared by the thermal evaporation technique. It is observed that SiO2 layers enhance the crystallinity of CdBr2 through increasing the crystallite sizes and decreasing the defect density, stacking faults, and microstrain by 50%, 56%, 32%, and 34%, respectively. A work function of 6.38 eV is determined from the temperature-dependent electrical resistivity measurements of type CdBr2. In addition, it is observed that, when coated with 50 nm-thick SiO2, the Au/CdBr2/SiO2/Au straddling-type transistors can reveal high current rectification ratios of 6.9 × 102 at low biasing voltages in the range of 0.06−0.30 V. The alternating current signals’ analysis in the microwave range of spectra indicates that the current conduction mechanism is dominated by the correlated barrier hopping and quantum mechanical tunneling. It is observed that the Au/CdBr2/SiO2/Au devices exhibit a negative effect accompanied with resonance−antiresonance in the capacitance spectra. Moreover, the microwave cutoff frequency which reaches ≈165.1 GHz and the magnitude of reflection coefficient spectra show that the device under study can perform as multiband pass/stop filters suitable for wire/wireless communication applications including 3G/4G technologies.
中文翻译：
用作微波多带通滤波器、负电容晶体管和电流整流器的 Au/CdBr2/SiO2/Au 跨接型异质结
在此，厚度为25-100 nm 的SiO 2纳米片用于提高Au/CdBr 2肖特基势垒的性能。Au/CdBr 2 /SiO 2 /Au跨接型异质结器件采用热蒸发技术制备。据观察，SiO 2层通过增加微晶尺寸和将缺陷密度、堆垛层错和微应变分别降低50%、56%、32%和34%来提高CdBr 2的结晶度。6.38 eV 的功函数是根据温度相关的电阻率测量值确定的输入 CdBr 2。此外，观察到，当涂有 50 nm 厚的 SiO 2 时，Au/CdBr 2 /SiO 2 /Au 跨骑型晶体管可以在以下范围内的低偏置电压下显示出 6.9 × 10 2 的高电流整流比0.06-0.30 V。交流电信号在光谱微波范围内的分析表明，电流传导机制由相关的势垒跳跃和量子力学隧穿主导。观察到 Au/CdBr 2 /SiO 2/Au 器件在电容谱中表现出伴随共振-反共振的负面影响。此外，达到 ≈165.1 GHz 的微波截止频率和反射系数谱的幅度表明，所研究的器件可以作为多带通/阻滤波器，适用于包括 3G/4G 技术在内的有线/无线通信应用。
更新日期：2021-11-16
中文翻译：
用作微波多带通滤波器、负电容晶体管和电流整流器的 Au/CdBr2/SiO2/Au 跨接型异质结
在此，厚度为25-100 nm 的SiO 2纳米片用于提高Au/CdBr 2肖特基势垒的性能。Au/CdBr 2 /SiO 2 /Au跨接型异质结器件采用热蒸发技术制备。据观察，SiO 2层通过增加微晶尺寸和将缺陷密度、堆垛层错和微应变分别降低50%、56%、32%和34%来提高CdBr 2的结晶度。6.38 eV 的功函数是根据温度相关的电阻率测量值确定的输入 CdBr 2。此外，观察到，当涂有 50 nm 厚的 SiO 2 时，Au/CdBr 2 /SiO 2 /Au 跨骑型晶体管可以在以下范围内的低偏置电压下显示出 6.9 × 10 2 的高电流整流比0.06-0.30 V。交流电信号在光谱微波范围内的分析表明，电流传导机制由相关的势垒跳跃和量子力学隧穿主导。观察到 Au/CdBr 2 /SiO 2/Au 器件在电容谱中表现出伴随共振-反共振的负面影响。此外，达到 ≈165.1 GHz 的微波截止频率和反射系数谱的幅度表明，所研究的器件可以作为多带通/阻滤波器，适用于包括 3G/4G 技术在内的有线/无线通信应用。
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