PtS_x, as a more recent 2D material that aroused extensive research interests, has been applied in electronic and optoelectronic devices because of its excellent electronic characteristics and commendable stability. However, the synthesis of large-scale uniform PtS_x remains a challenge. Here we studied a modified chemical vapor deposition (CVD) method to grow large-scale uniform PtS_x films on SiO₂/Si and c-plane sapphire substrates, which can avoid some disadvantages of the mechanical exfoliation method in the device fabrication. The large area uniform PtS_x films are achieved through Pt sulfurization using H₂S gas, replacing the sulfur powder in traditional methods, as the sulfur source. The material characterizations successfully proved that our modified CVD method is feasible and repeatable, and the PtS_x film can be synthesized on different substrates. The PtS_x photodevices show good photoresponse properties with a wide spectrum response range. The PtS_x/sapphire device shows a better photoresponse in terms of the detectivity (9.17 × 10⁹ Jones) and the responsivity (0.31 A W⁻¹) than that of the PtS_x/SiO₂/Si device in our experiment, as well as one-year air stability, which may be caused by the different PtS_x film quality due to a lattice mismatch difference between the PtS_x and the different substrates. The results offer the design and synthesis technology for large-scale, uniform, and stable PtS_x film, as well as an example of photoresponse-enhanced devices which could be generalizable to other transition metal dichalcogenides (TMDCs) and devices for future development and applications.

PtS _x作为一种较新的二维材料，引起了广泛的研究兴趣，由于其优异的电子特性和值得称道的稳定性，已被应用于电子和光电器件中。然而，大规模均匀PtS _x的合成仍然是一个挑战。在这里，我们研究了一种改进的化学气相沉积（CVD）方法，在 SiO ₂ /Si 和 c 面蓝宝石衬底上生长大规模均匀的 PtS _x薄膜，可以避免机械剥离方法在器件制造中的一些缺点。大面积均匀 PtS _x薄膜是通过使用 H _{2 的}Pt 硫化实现的S气，代替传统方法中的硫粉，作为硫源。材料表征成功证明了我们改进的 CVD 方法是可行和可重复的，并且 PtS _x薄膜可以在不同的基板上合成。PtS _x光器件显示出良好的光响应特性，具有广泛的光谱响应范围。在我们的实验中，PtS _x /sapphire 器件在探测率（9.17 × 10 ⁹ Jones）和响应度（0.31 AW ^-1）方面表现出比 PtS _x /SiO ₂ /Si 器件更好的光响应，以及一年的空气稳定性，这可能是由于不同的 PtS _x由于 PtS _x和不同衬底之间的晶格失配差异而导致的薄膜质量。结果提供了大规模、均匀和稳定的 PtS _x薄膜的设计和合成技术，以及一个光响应增强器件的例子，可推广到其他过渡金属二硫属化物 (TMDC) 和器件以供未来开发和应用.