Cation or anion vacancies in semiconducting oxides usually benefit activity for CO oxidation. To study the nature of vacancy engineering for a thermocatalytic reaction, we adopted lattice doping of cations with varied valence states to construct anion and cation vacancies in n-type and p-type semiconducting CeO₂ and NiO, respectively. Doping cations can effectively regulate the number of the vacancies, thus tailoring the activity for CO oxidation. The strong correlation of activation energy and specific activity with a catalyst band gap verified that the nature of vacancy engineering for activity of CeO₂ and NiO for CO oxidation can be attributed to tailoring of the band gap. The larger the vacancy amount, the smaller the band gap, and the lower the activation energy, thus giving a higher specific activity. Band-gap engineering, widely used for photocatalytic processes, can be a new tool for tailoring the activity of semiconducting oxide catalysts for thermocatalytic reactions.

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带隙工程：一种为 CO 氧化定制半导体氧化物催化剂活性的新工具

半导体氧化物中的阳离子或阴离子空位通常有利于 CO 氧化。为了研究热催化反应空位工程的性质，我们采用不同价态阳离子的晶格掺杂，分别在 n 型和 p 型半导体 CeO ₂和 NiO 中构建阴离子和阳离子空位。掺杂阳离子可以有效地调节空位的数量，从而调整 CO 氧化的活性。活化能和比活性与催化剂带隙的强相关性证实了 CeO ₂活性的空位工程的性质用于 CO 氧化的 NiO 可归因于带隙的调整。空位量越大，带隙越小，活化能越低，比活度越高。广泛用于光催化过程的带隙工程可以成为定制半导体氧化物催化剂用于热催化反应的活性的新工具。