Hybrid 2D-QD MoS2–PbSe Quantum Dot Broadband Photodetectors with High-Sensitivity and Room-Temperature Operation at 2.5 µm,Advanced Optical Materials

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Hybrid 2D-QD MoS2–PbSe Quantum Dot Broadband Photodetectors with High-Sensitivity and Room-Temperature Operation at 2.5 µm
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-09-12 , DOI: 10.1002/adom.202101378
Biswajit Kundu ₁ , Onur Özdemir ₁ , Mariona Dalmases ₁ , Gaurav Kumar ₁ , Gerasimos Konstantatos _{1,

2}

Affiliation

Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be served by expensive epitaxially grown photodetectors, limiting their market potential and social impact. The use of colloidal quantum dots (CQDs) and 2D materials in a hybrid layout is an attractive alternative to design low-cost complementary metal-oxide-semiconductor (CMOS) compatible infrared photodetectors. However, the spectral sensitivity of these conventional hybrid detectors is restricted to 2.1 µm. Herein, a hybrid structure comprising molybdenum disulfide (MoS₂) with lead selenide (PbSe) CQDs is presented to extend their sensitivity further toward the mid-wave infrared, up to 3 µm. A room-temperature responsivity of 137.6 A W⁻¹ and a detectivity of 7.7 × 10¹⁰ Jones are achieved at 2.55 µm owing to highly efficient photoexcited carrier separation at the interface of MoS₂ and PbSe in combination with an oxide coating to reduce dark current; the highest value is yet for a PbSe-based hybrid device. These findings strongly support the successful fabrication of hybrid devices, which may pave the pathway for cost-effective, high-performance, next-generation, novel photodetectors.

中文翻译：

混合 2D-QD MoS2–PbSe 量子点宽带光电探测器，在 2.5 µm 处具有高灵敏度和室温操作

宽带红外光电探测器在安全、气体传感、生物成像、食品质量光谱和回收等各种应用中具有深远的意义，仅举几例。然而，这些应用目前可以由昂贵的外延生长光电探测器提供服务，限制了它们的市场潜力和社会影响。在混合布局中使用胶体量子点 (CQD) 和 2D 材料是设计低成本互补金属氧化物半导体 (CMOS) 兼容红外光电探测器的一种有吸引力的替代方案。然而，这些传统混合探测器的光谱灵敏度被限制在 2.1 µm。在此，包含二硫化钼 (MoS ₂) 与硒化铅 (PbSe) CQDs 一起被提出以将它们的灵敏度进一步扩展到中波红外线，最高可达 3 µm。由于在 MoS ₂和 PbSe界面处的高效光激发载流子分离以及用于降低暗电流的氧化物涂层，在 2.55 µm 处实现了 137.6 AW ^{-1 的}室温响应度和 7.7 × 10 ¹⁰ Jones的探测率；最高值尚未出现在基于 PbSe 的混合设备中。这些发现有力地支持了混合器件的成功制造，这可能为低成本、高性能、下一代新型光电探测器铺平道路。

更新日期：2021-11-19

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