Direct Observation of Interface-Dependent Multidomain State in the BaTiO3 Tunnel Barrier of a Multiferroic Tunnel Junction Memristor,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Direct Observation of Interface-Dependent Multidomain State in the BaTiO3 Tunnel Barrier of a Multiferroic Tunnel Junction Memristor
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-09-02 , DOI: 10.1021/acsami.1c11661
Qiqi Zhang _{1,

2} , Xiaoguang Li ₃ , Jing Zhu ₁

Affiliation

Multiferroic tunnel junctions (MFTJs), normally consisting of a four-state resistance, have been studied extensively as a potential candidate for nonvolatile memory devices. More interestingly, the MFTJs whose resistance can be tuned continuously with applied voltage were also reported recently. Since the performance of MFTJs is closely related to their interfacial structures, it is necessary to investigate MFTJs at the atomic scale. In this work, atomic-resolution HAADF, ABF, and EELS of the La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ MFTJ memristor have been obtained with aberration-corrected scanning transmission electron microscopy (STEM). These results demonstrate varied degree of interfacial cation intermixing at the bottom BTO/LSMO interface, which has a direct influence on the polarization of the ferroelectric barrier BTO and the electronic structure of Mn near the interfaces. We also took advantage of a simplified model to explain the relation between the interfacial behavior and polarization states, which could be a contributing factor to the transport properties of this MFTJ.

中文翻译：

直接观察多铁性隧道结忆阻器 BaTiO3 隧道势垒中的界面相关多畴态

多铁性隧道结 (MFTJ) 通常由四态电阻组成，已被广泛研究作为非易失性存储器件的潜在候选物。更有趣的是，最近还报道了电阻可以随施加电压连续调节的 MFTJ。由于 MFTJs 的性能与其界面结构密切相关，因此有必要在原子尺度上研究 MFTJs。在这项工作中，La _0.7 Sr _0.3 MnO ₃ /BaTiO ₃ /La _0.7 Sr _0.3 MnO _{3 的}原子分辨率HAADF、ABF和EELSMFTJ 忆阻器已通过像差校正的扫描透射电子显微镜 (STEM) 获得。这些结果表明底部 BTO/LSMO 界面处不同程度的界面阳离子混合，这对铁电势垒 BTO 的极化和界面附近 Mn 的电子结构有直接影响。我们还利用简化模型来解释界面行为和极化状态之间的关系，这可能是影响 MFTJ 传输特性的一个因素。

更新日期：2021-09-15

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南