Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory,Physica Status Solidi-Rapid Research Letters

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Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-09-01 , DOI: 10.1002/pssr.202100396
Shujun Ye ₁

Affiliation

Magnetoelectric (ME) switching energy is the most important aspect in the practical application of antiferromagnetic (AFM) Cr₂O₃-based perpendicular exchange-coupling heterostructures, but it is not fully understood. This study firstly clarifies the relation between the applied magnetic/electric field and surface spin directions (domain status) as well as the perpendicular exchange bias sign in this system. Secondly, the asymmetric ME switching behavior for both Cr₂O₃ and its perpendicular exchange-coupling heterostructures is discussed. Finally, a model is developed to examine the energy required during the ME switching of the above system. It was found that the surface status and microstructure of Cr₂O₃ are essential factors influencing the system's ME switching energy. This work contributes to realizing low-energy information writing for AFM Cr₂O₃ used in spintronic logic devices and memory.

中文翻译：

用于自旋电子逻辑器件和存储器的反铁磁性 Cr2O3 的磁电开关能量

磁电 (ME) 开关能量是反铁磁 (AFM) Cr ₂ O ₃基垂直交换耦合异质结构实际应用中最重要的方面，但尚未完全了解。该研究首先阐明了该系统中施加的磁场/电场与表面自旋方向（域状态）以及垂直交换偏置符号之间的关系。其次，讨论了 Cr ₂ O ₃及其垂直交换耦合异质结构的不对称 ME 切换行为。最后，开发了一个模型来检查上述系统在 ME 切换期间所需的能量。发现Cr ₂ O的表面状态和微观结构₃是影响系统 ME 开关能量的重要因素。这项工作有助于实现用于自旋电子逻辑器件和存储器的AFM Cr ₂ O _{3 的}低能量信息写入。

更新日期：2021-09-01

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