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Seed Dibbling Method for the Growth of High-Quality Diamond on GaN
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-31 , DOI: 10.1021/acsami.1c08761 Reza Soleimanzadeh 1 , Mehdi Naamoun 1 , Alessandro Floriduz 1 , Riyaz Abdul Khadar 1 , Remco van Erp 1 , Elison Matioli 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-31 , DOI: 10.1021/acsami.1c08761 Reza Soleimanzadeh 1 , Mehdi Naamoun 1 , Alessandro Floriduz 1 , Riyaz Abdul Khadar 1 , Remco van Erp 1 , Elison Matioli 1
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The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of diamond-on-GaN is challenging due to the high lattice and thermal expansion mismatches. The weak adhesion of diamond to GaN and high residual stresses after the deposition often result in the diamond film delamination or development of cracks, which hinder the subsequent device fabrication. Here, we present a new seed dibbling method for seeding and growing high-quality diamond films on foreign substrates, in particular on cost-effective GaN-on-Si, with significantly improved adhesion. Diamond films grown conformally on patterned GaN-on-Si presented high quality with significantly larger grains and a 95% sp3/sp2 ratio, excellent interface between diamond and GaN, and lower residual stresses (as low as 0.2 GPa) compared to conventional methods. In addition, the method provided excellent adhesion, enabling a reliable polishing of the as-grown diamond films on GaN on Si without any delamination, resulting in smooth diamond-on-GaN substrates with subnanometer root-mean-square roughness. Diamond layers deposited via seed dibbling resulted in a 2-fold improvement in the effective thermal conductivity for GaN-on-Si with only a 20 μm thick diamond layer. This method opens many new possibilities for the development of high-performance power electronic devices and integrated devices with excellent thermal management based on a diamond-on-GaN platform. In addition, this technique could be extended to other substrates to combine the outstanding properties of diamond with other kinds of devices.
中文翻译：
用于在 GaN 上生长高质量金刚石的种子点播方法
金刚石和 GaN 的集成已被高度追求用于热管理目的以及将它们在电力电子应用和新型半导体异质结构中的卓越互补特性相结合。然而，由于高晶格和热膨胀不匹配，GaN 上金刚石的生长具有挑战性。金刚石与氮化镓的附着力较弱，沉积后的残余应力较高，常导致金刚石薄膜分层或产生裂纹，从而阻碍后续器件的制造。在这里，我们提出了一种新的种子点播方法，用于在异质衬底上播种和生长高质量的金刚石薄膜，特别是在具有成本效益的 GaN-on-Si 上，显着提高了附着力。3 /sp 2与传统方法相比，金刚石和 GaN 之间具有出色的界面，以及更低的残余应力（低至 0.2 GPa）。此外，该方法提供了出色的附着力，能够可靠地抛光 Si 上 GaN 上生长的金刚石薄膜，而不会出现任何分层，从而产生具有亚纳米均方根粗糙度的光滑金刚石基 GaN 衬底。通过种子点滴沉积的金刚石层使 GaN-on-Si 的有效热导率提高了 2 倍，仅具有 20 μm 厚的金刚石层。这种方法为开发高性能电力电子设备和集成设备开辟了许多新的可能性，这些设备具有基于金刚石基 GaN 平台的出色热管理。此外，
更新日期：2021-09-15
中文翻译：
用于在 GaN 上生长高质量金刚石的种子点播方法
金刚石和 GaN 的集成已被高度追求用于热管理目的以及将它们在电力电子应用和新型半导体异质结构中的卓越互补特性相结合。然而，由于高晶格和热膨胀不匹配，GaN 上金刚石的生长具有挑战性。金刚石与氮化镓的附着力较弱，沉积后的残余应力较高，常导致金刚石薄膜分层或产生裂纹，从而阻碍后续器件的制造。在这里，我们提出了一种新的种子点播方法，用于在异质衬底上播种和生长高质量的金刚石薄膜，特别是在具有成本效益的 GaN-on-Si 上，显着提高了附着力。3 /sp 2与传统方法相比，金刚石和 GaN 之间具有出色的界面，以及更低的残余应力（低至 0.2 GPa）。此外，该方法提供了出色的附着力，能够可靠地抛光 Si 上 GaN 上生长的金刚石薄膜，而不会出现任何分层，从而产生具有亚纳米均方根粗糙度的光滑金刚石基 GaN 衬底。通过种子点滴沉积的金刚石层使 GaN-on-Si 的有效热导率提高了 2 倍，仅具有 20 μm 厚的金刚石层。这种方法为开发高性能电力电子设备和集成设备开辟了许多新的可能性，这些设备具有基于金刚石基 GaN 平台的出色热管理。此外，
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