Atomic-Layer-Ti-Doped Ga2O3 Thin Films with Tunable Optical Properties and Wide Ultraviolet Optoelectronic Responses,Physica Status Solidi-Rapid Research Letters

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Atomic-Layer-Ti-Doped Ga2O3 Thin Films with Tunable Optical Properties and Wide Ultraviolet Optoelectronic Responses
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-08-27 , DOI: 10.1002/pssr.202100411
Weiming Liu ₁ , Xudan Zhu ₁ , Junbo He ₁ , Yan Yang ₂ , Tiantian Huang ₂ , Xin Chen _{2,

3} , Rongjun Zhang _{1,

4,

5}

Affiliation

Doping and alloying in Ga₂O₃ to tune electronic and photonic behaviors is still urgent but challenging, whereas Ga₂O₃ has shown great promise in deep-ultraviolet (DUV) photodetectors and functional high-power devices. Herein, atomic-layer-Ti-doped/incorporating Ga₂O₃ (TGO) thin films with tailored optical properties in the UV region from 200 to 400 nm are described. The Ti content in amorphous TGO thin films is controlled and adjusted up to 11 at% during a plasma-enhanced atomic layer deposition (PE-ALD) process. The composition-dependent optical constants of both amorphous and polycrystalline TGO thin films are analyzed in the wavelength region of 200–800 nm through spectroscopic ellipsometry (SE) with a point-by-point fitting method. An obvious bandgap tuning effect and redshifted absorption edges are observed in the transmittance spectra of TGO thin films with increasing Ti concentration. Moreover, composition-dependent optical constants and wide absorption are also verified by the significant and broadened DUV photoelectronic responses of TGO-based photodetectors. It is believed that this work will help in understanding the DUV optical constants and bandgap transitions of TGO thin films used for functional optical devices in the UV region below 400 nm.

中文翻译：

具有可调光学特性和宽紫外光电响应的原子层 Ti 掺杂 Ga2O3 薄膜

在 Ga ₂ O _{3 中}掺杂和合金化以调整电子和光子行为仍然紧迫但具有挑战性，而 Ga ₂ O ₃在深紫外 (DUV) 光电探测器和功能性高功率器件中显示出巨大的前景。在此，原子层-Ti掺杂/掺入Ga ₂ O ₃描述了在 200 到 400 nm 的紫外区域具有定制光学特性的 (TGO) 薄膜。在等离子体增强原子层沉积 (PE-ALD) 工艺期间，非晶 TGO 薄膜中的 Ti 含量被控制并调整至 11 at%。非晶和多晶 TGO 薄膜的组成相关光学常数在 200-800 nm 的波长范围内通过光谱椭偏法 (SE) 和逐点拟合方法进行分析。随着Ti浓度的增加，在TGO薄膜的透射光谱中观察到明显的带隙调谐效应和红移的吸收边缘。此外，基于 TGO 的光电探测器显着且更宽的 DUV 光电响应也验证了与成分相关的光学常数和广泛的吸收。

更新日期：2021-08-27

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