Tuning the exposure of BiVO4-{010} facets to enhance the N2 photofixation performance,RSC Advances

当前位置： X-MOL 学术 › RSC Adv. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Tuning the exposure of BiVO4-{010} facets to enhance the N2 photofixation performance
RSC Advances ( IF 3.9 ) Pub Date : 2021-08-27 , DOI: 10.1039/d1ra02739e
Honghao Chu ₁ , Shisheng Zheng ₁ , Yang Li ₁ , Kuanda Xu ₁ , Qingshui Hong ₂ , Tangyi Li ₁ , Wenju Ren ₃ , Shunning Li ₁ , Zongwei Mei ₁ , Feng Pan _{1,

4}

Affiliation

Effective separation of photoexcited carriers and chemisorption of the N₂ molecule are two key issues to efficient nitrogen photofixation. The spatial charge separation of BiVO₄ with anisotropic exposed facets, namely the transfer of photoexcited electrons and holes to {010} and {110} facets, respectively, helps to enhance the separation ability of photogenerated carriers. Theoretical calculation results predict that a surface oxygen vacancy is easier to form on the (010) facet than on the (110) facet of BiVO₄. Accordingly, in this study, enhanced N₂ photofixation performance has been achieved for the first time by tuning the exposure of {010} facets of BiVO₄.

中文翻译：

调整 BiVO4-{010} 刻面的曝光以提高 N2 光固定性能

光激发载体的有效分离和N ₂分子的化学吸附是有效氮光固定的两个关键问题。_{BiVO 4}具有各向异性暴露晶面的空间电荷分离，即光激发电子和空穴分别转移到{010}和{110}晶面，有助于提高光生载流子的分离能力。_{理论计算结果表明，BiVO 4}的(010)晶面比(110)晶面更容易形成表面氧空位。_{因此，在本研究中，通过调整 BiVO 4}的 {010} 晶面的曝光，首次实现了增强的 N ₂光固定性能。

更新日期：2021-08-27

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南