This work studied the structural, thermal, optical and electrical properties of β-Ga₂O₃ (101) plane with high-density surface dangling bonds for the first time. The high quality (101)-oriented substrate with a full width at half maximum (FWHM) of 90 arcsec in X-ray rocking curve was grown by the edge-defined film-fed growth (EFG) method. The atomic arrangement of (101) surface was terminated either by Ga or O. The dangling bond densities of Ga- and O-terminated surfaces were calculated to be 2.230 ×10¹⁵ cm^-2 and 2.376 × 10¹⁵ cm^-2, respectively. The thermal property of the (101) plane was characterized. The Raman active modes of the (101) plane were allowed for selective observation with the variation of polarizing angle. The surface and Schottky barrier height of the (101) plane were estimated to be as low as 1.14 eV and 1.07 eV by optical and electrical measurements, respectively. The activation energy for wet chemical etching was determined to be 0.451 eV for (101) plane and the high etching rate was obtained. By comprehensive comparisons with other common planes, the potential applications of β-Ga₂O₃ (101) plane should be comparable to the widely used $\left(\bar{2}01\right)$ plane.

这项工作首次研究了具有高密度表面悬空键的β- Ga ₂ O ₃ (101) 面的结构、热学、光学和电学性质。 X 射线摇摆曲线半峰全宽 (FWHM) 为 90弧秒的高质量 (101) 取向基板是通过边缘定义薄膜生长 (EFG) 方法生长的。(101)表面的原子排列由Ga或O终止。Ga-和O-终止表面的悬空键密度计算为2.230×10 ¹⁵  cm ^-2和2.376×10 ¹⁵  cm ^-2， 分别。表征了（101）面的热性能。(101)面的拉曼有源模式可以随着偏振角的变化进行选择性观察。通过光学和电学测量，估计 (101) 平面的表面和肖特基势垒高度分别低至 1.14  eV 和 1.07  eV。湿法化学蚀刻的活化能 为（101）面确定为0.451 eV，获得了高蚀刻速率。通过与其他常见平面的综合比较，β- Ga ₂ O ₃ (101) 平面的潜在应用应与广泛使用的$\left(\bar{2}01\right)$ 飞机。