Low Deposition Temperature Amorphous ALD-Ga2O3 Thin Films and Decoration with MoS2 Multilayers toward Flexible Solar-Blind Photodetectors,ACS Applied Materials & Interfaces

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Low Deposition Temperature Amorphous ALD-Ga2O3 Thin Films and Decoration with MoS2 Multilayers toward Flexible Solar-Blind Photodetectors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-26 , DOI: 10.1021/acsami.1c11692
Yan Yang _{1,

2} , Weiming Liu _{1,

3} , Tiantian Huang ₁ , Mengxia Qiu ₁ , Rui Zhang ₁ , Wanli Yang ₁ , Junbo He _{1,

3} , Xin Chen _{1,

2,

4} , Ning Dai _{1,

2,

4}

Affiliation

Flexible sensors and photodetectors are among the robust and powerful strategies for advanced and smart devices. Meanwhile, wide band-gap metal oxides are competitive candidates for fabricating flexible solar-blind photodetectors (SBPDs) but still challenging in both fundamental and practical fields. Here, we demonstrate the amorphous ALD-Ga₂O₃ (am-ALD-Ga₂O₃) thin films realized at a moderate temperature toward flexible SBPDs. The bandgap (E_g) of 4.88–5.04 eV depends on and changes with the thickness of am-ALD-Ga₂O₃ thin films during atomic layer deposition (ALD) processes. The SBPDs are fabricated with the as-grown am-ALD-Ga₂O₃ thin films on desired substrates and exhibit an I_light/I_dark ratio of up to ∼4.5 × 10⁴ and dark current down to ∼10^–13 A. Subsequently, decorating the ALD-Ga₂O₃ channels with MoS₂ multilayers helps improve the photocurrent of SBPDs that worked in the deep ultraviolet region. We expect that our work will offer more opportunities to understand and exploit am-ALD-Ga₂O₃ thin films toward advanced flexible SBPDs and functional sensors.

中文翻译：

低沉积温度非晶 ALD-Ga2O3 薄膜和 MoS2 多层装饰朝向柔性日盲光电探测器

灵活的传感器和光电探测器是先进和智能设备的强大而强大的策略之一。同时，宽带隙金属氧化物是制造柔性日盲光电探测器（SBPD）的竞争候选者，但在基础和实践领域仍然具有挑战性。在这里，我们展示了在中等温度下实现的非晶 ALD-Ga ₂ O ₃ (am-ALD-Ga ₂ O ₃ ) 薄膜，用于柔性 SBPD。4.88-5.04 eV的带隙 ( E _g ) 取决于原子层沉积 (ALD) 工艺过程中 am-ALD-Ga ₂ O ₃薄膜的厚度并随其变化。SBPDs 是用 as-grown am-ALD-Ga _{2 制造的}O ₃薄膜在所需的基板上，并表现出高达 ~4.5 × 10 ⁴的I_光/I_暗比和低至 ~10 ^–13 A 的暗电流。随后，用 MoS ₂多层膜装饰 ALD-Ga ₂ O ₃通道有助于改善在深紫外区域工作的 SBPD 的光电流。我们希望我们的工作将提供更多机会来理解和利用 am-ALD-Ga ₂ O ₃薄膜，以实现先进的柔性 SBPD 和功能传感器。

更新日期：2021-09-08

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