The development of a dual-filament model is vital for achieving better performance in next-generation resistive random-access memory (RRAM). In this work, the microstructure evolution and corresponding performance of a Cu/Ta₂O_5−x/Pt system are investigated at the atomic scale. By inducing intrinsic oxygen vacancies into tantalum oxide and applying copper as the active electrode, the RRAM device can exhibit the electrical properties of a dual-mechanism filament. The device demonstrates a long retention time (10⁴ s) and a large memory window of 10⁶. By using high-resolution transmission electron microscopy and high-resolution X-ray photoelectron spectroscopy, the conductive filament is found to consist of crystalline copper and oxygen vacancies. Moreover, with the growth kinetics of filaments from in situ transmission electron microscopy and curve fitting relevant to the conduction mechanism, the formation of filaments is promoted by field-coalesced oxygen vacancies induced by the growth of copper filaments. Therefore, this work provides a unique perspective and a novel material engineering approach for tailoring RRAM devices and developing further applications in electronic technology.

中文翻译：

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双机构导电丝忆阻器的结构分析和性能

双灯丝模型的开发对于在下一代电阻式随机存取存储器 (RRAM) 中实现更好的性能至关重要。在这项工作中，在原子尺度上研究了 Cu/Ta ₂ O _{5- x} /Pt 系统的微观结构演变和相应的性能。通过将本征氧空位引入氧化钽并应用铜作为有源电极，RRAM 器件可以表现出双机制灯丝的电学特性。该器件具有较长的保留时间 (10 ⁴  s) 和 10 ⁶的大内存窗口. 通过使用高分辨率透射电子显微镜和高分辨率 X 射线光电子能谱，发现导电丝由结晶铜和氧空位组成。此外，随着原位透射电子显微镜和与传导机制相关的曲线拟合的细丝生长动力学，由铜细丝生长引起的场聚结氧空位促进了细丝的形成。因此，这项工作为定制 RRAM 器件和开发电子技术中的进一步应用提供了独特的视角和新颖的材料工程方法。