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Quasi-2D Halide Perovskite Memory Device Formed by Acid–Base Binary Ligand Solution Composed of Oleylamine and Oleic Acid
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-17 , DOI: 10.1021/acsami.1c09725
Hyeon Jun Jeong 1 , Chulho Park 1 , Hobeom Jeon 1 , Kang-Nyeoung Lee 1 , Juchan Lee 1 , Seong Chu Lim 1 , Gon Namkoong 1, 2 , Mun Seok Jeong 3
Affiliation  

Organometal halide perovskite materials are receiving significant attention for the fabrication of resistive-switching memory devices based on their high stability, low power consumption, rapid switching, and high ON/OFF ratios. In this study, we synthesized 3D FAPbBr3 and quasi-2D (RNH3)2(FA)1Pb2Br7 films using an acid–base binary ligand solution composed of oleylamine (OlAm) and oleic acid in toluene. The quasi-2D (RNH3)2(FA)1Pb2Br7 films were synthesized by controlling the protonated OlAm (RNH3+) solution concentration to replace FA+ cations with large organic RNH3+ cations from 3D FAPbBr3 perovskites. The quasi-2D (RNH3)2(FA)1Pb2Br7 devices exhibited nonvolatile write-once read-many (WORM) memory characteristics, whereas the 3D FAPbBr3 only exhibited hysteresis behavior. Analysis of the 3D FAPbBr3 device indicated operation in the trap-limited space-charge-limited current region. In contrast, quasi-2D (RNH3)2(FA)1Pb2Br7 devices provide low trap density that is completely filled by injected charge carriers and then subsequently form conductive filaments (CFs) to operate as WORM devices. Nanoscale morphology analysis and an associated current mapping study based on conductive atomic force microscopy measurements revealed that perovskite grain boundaries serve as major channels for high current, which may be correlated with the conductive low-resistive-switching behavior and formation of CFs in WORM devices.

中文翻译:

由油胺和油酸组成的酸碱二元配体溶液形成的准二维卤化物钙钛矿存储器件

有机金属卤化物钙钛矿材料因其高稳定性、低功耗、快速开关和高开/关比而在电阻开关存储器件的制造中受到了极大的关注。在这项研究中,我们使用由油胺 (OlAm) 和油酸在甲苯中组成的酸碱二元配体溶液合成了 3D FAPbBr 3和准 2D (RNH 3 ) 2 (FA) 1 Pb 2 Br 7薄膜。准的2D(RNH 32(FA)1层的Pb 27膜通过控制所述质子化的奥兰(RNH合成3 +) 溶液浓度,用来自 3D FAPbBr 3钙钛矿的大有机 RNH 3 +阳离子代替 FA +阳离子。准2D (RNH 3 ) 2 (FA) 1 Pb 2 Br 7器件表现出非易失性一次写入多次读取(WORM) 存储器特性,而3D FAPbBr 3仅表现出滞后行为。3D FAPbBr 3器件的分析表明在陷阱受限空间电荷受限电流区域中运行。相反,准二维 (RNH 3 ) 2 (FA) 1 Pb 2 Br 7器件提供低陷阱密度,被注入的电荷载流子完全填充,然后形成导电丝 (CF) 以用作 WORM 器件。纳米级形态分析和基于导电原子力显微镜测量的相关电流映射研究表明,钙钛矿晶界是高电流的主要通道,这可能与 WORM 器件中的导电低阻开关行为和 CF 的形成有关。
更新日期:2021-09-01
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