用于超宽带隙电子器件热管理的 Ga2O3-on-SiC 复合晶片,ACS Applied Materials & Interfaces

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用于超宽带隙电子器件热管理的 Ga2O3-on-SiC 复合晶片
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-17 , DOI: 10.1021/acsami.1c09736
Yiwen Song ₁ , Daniel Shoemaker ₁ , Jacob H Leach ₂ , Craig McGray ₃ , Hsien-Lien Huang ₄ , Arkka Bhattacharyya ₅ , Yingying Zhang ₆ , C Ulises Gonzalez-Valle ₁ , Tina Hess ₂ , Sarit Zhukovsky ₃ , Kevin Ferri ₇ , Robert M Lavelle ₈ , Carlos Perez ₁ , David W Snyder ₈ , Jon-Paul Maria ₇ , Bladimir Ramos-Alvarado ₁ , Xiaojia Wang ₆ , Sriram Krishnamoorthy _{5,

9} , Jinwoo Hwang ₄ , Brian M Foley ₁ , Sukwon Choi ₁

Affiliation

Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Kyma Technologies, Inc., Raleigh, North Carolina 27617, United States.
Modern Microsystems, Gaithersburg, Maryland 20878, United States.
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States.
Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, United States.
Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States.
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Electronic Materials and Devices Department, Applied Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States.

β相氧化镓（GA ₂ ö ₃）是一种新兴超宽带隙（UWBG）半导体（Ë _ģ〜4.8电子伏特），该承诺基于GaN和碳化硅中的性能代的改进和在当今的商业的宽带隙功率电子器件的制造成本. 然而，过热已被确定为Ga ₂ O ₃器件技术的性能和商业化的主要瓶颈。在这项工作中，使用熔结方法开发了一种具有高传热性能和外延表面光洁度的新型 Ga ₂ O ₃ /4H-SiC 复合晶片。利用低温金属有机气相外延，Ga₂ O ₃外延层在复合晶片上成功生长，同时保持了复合晶片的结构完整性而不会造成界面损伤。在 600 °C 的生长温度下获得了原子级光滑的同质外延薄膜，其室温霍尔迁移率约为 94 cm ² /Vs，体积电荷约为3 × 10 ¹⁷ cm ^–3。已经使用频域热反射和微分稳态热反射方法研究了跨越 Ga ₂ O ₃ /4H-SiC 界面的声子传输。扫描透射电子显微镜分析表明声子传输穿过 Ga ₂ O ₃/4H-SiC界面由SiN _x键合层和无意形成的SiO _x夹层的厚度支配。通过时域热反射研究了影响 6.5 μm 厚 Ga ₂ O ₃层的热导率的外在效应。进行热模拟以估计假设的单指 Ga ₂ O ₃的热性能的改善在复合衬底上制造的金属半导体场效应晶体管。这种新颖的功率晶体管拓扑使结到封装器件的热阻降低了约 4.3 倍。此外，当将复合晶片实施到实际多指设备的设备设计中时，证明了更显着的冷却效果。设备级热管理方面的这些创新有望充分利用 UWBG 材料的潜在优势，这将显着提高电力电子设备的功率密度和效率，而不是当前最先进的商业设备。

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Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

β-phase gallium oxide (Ga₂O₃) is an emerging ultrawide bandgap (UWBG) semiconductor (E_G ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today’s commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of Ga₂O₃ device technologies. In this work, a novel Ga₂O₃/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed using a fusion-bonding method. By taking advantage of low-temperature metalorganic vapor phase epitaxy, a Ga₂O₃ epitaxial layer was successfully grown on the composite wafer while maintaining the structural integrity of the composite wafer without causing interface damage. An atomically smooth homoepitaxial film with a room-temperature Hall mobility of ∼94 cm²/Vs and a volume charge of ∼3 × 10¹⁷ cm^–3 was achieved at a growth temperature of 600 °C. Phonon transport across the Ga₂O₃/4H-SiC interface has been studied using frequency-domain thermoreflectance and a differential steady-state thermoreflectance approach. Scanning transmission electron microscopy analysis suggests that phonon transport across the Ga₂O₃/4H-SiC interface is dominated by the thickness of the SiN_x bonding layer and an unintentionally formed SiO_x interlayer. Extrinsic effects that impact the thermal conductivity of the 6.5 μm thick Ga₂O₃ layer were studied via time-domain thermoreflectance. Thermal simulation was performed to estimate the improvement of the thermal performance of a hypothetical single-finger Ga₂O₃ metal–semiconductor field-effect transistor fabricated on the composite substrate. This novel power transistor topology resulted in a ∼4.3× reduction in the junction-to-package device thermal resistance. Furthermore, an even more pronounced cooling effect is demonstrated when the composite wafer is implemented into the device design of practical multifinger devices. These innovations in device-level thermal management give promise to the full exploitation of the promising benefits of the UWBG material, which will lead to significant improvements in the power density and efficiency of power electronics over current state-of-the-art commercial devices.

更新日期：2021-09-01

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