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Ultra-High Performance Amorphous Ga2O3 Photodetector Arrays for Solar-Blind Imaging
Advanced Science ( IF 14.3 ) Pub Date : 2021-08-13 , DOI: 10.1002/advs.202101106 Yuan Qin 1, 2 , Li-Heng Li 3 , Zhaoan Yu 1 , Feihong Wu 2 , Danian Dong 1 , Wei Guo 2 , Zhongfang Zhang 2 , Jun-Hui Yuan 3 , Kan-Hao Xue 3 , Xiangshui Miao 3 , Shibing Long 2
Advanced Science ( IF 14.3 ) Pub Date : 2021-08-13 , DOI: 10.1002/advs.202101106 Yuan Qin 1, 2 , Li-Heng Li 3 , Zhaoan Yu 1 , Feihong Wu 2 , Danian Dong 1 , Wei Guo 2 , Zhongfang Zhang 2 , Jun-Hui Yuan 3 , Kan-Hao Xue 3 , Xiangshui Miao 3 , Shibing Long 2
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The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga2O3 via a post-annealing process. The post-annealed MSM a-Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo-to-dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super-high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal-to-noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large-scale, high-uniformity 32 × 32 image sensor array based on the post-annealed a-Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar-blind imaging, environmental monitoring, artificial intelligence and machine vision.
中文翻译：
用于日盲成像的超高性能非晶 Ga2O3 光电探测器阵列
对具有卓越感光特性的可扩展日盲图像传感器的需求不断增长，刺激了对更先进的日盲光电探测器（SBPD）阵列的研究。在这项工作中，作者通过后退火工艺展示了基于非晶 ( a- ) Ga 2 O 3的超高性能金属-半导体-金属 (MSM) SBPD。退火后的 MSM a -Ga 2 O 3 SBPD 表现出 733 A/W 的超高灵敏度和 18 ms 的高响应速度，在 5 V 电压下具有超过 10 4的高增益带宽积。SBPD还表现出超高的光敏度。 -暗电流比为3.9×10 7。此外，由于低至3.5 fW Hz -1/2的极低噪声， PD 表现出 3.9 × 10 16 Jones 的超高比探测率，表明具有高信噪比。开尔文探针力显微镜和第一原理计算揭示了这种优异光电特性的根本机制。此外，首次制造了基于后退火a -Ga 2 O 3 SBPD的大规模、高均匀性32×32图像传感器阵列。由于阵列的高灵敏度和均匀性，可以获得高对比度的清晰目标物体图像。这些结果证明了Ga 2 O 3 PD在日盲成像、环境监测、人工智能和机器视觉应用中的可行性和实用性。
更新日期：2021-10-21
中文翻译：
用于日盲成像的超高性能非晶 Ga2O3 光电探测器阵列
对具有卓越感光特性的可扩展日盲图像传感器的需求不断增长，刺激了对更先进的日盲光电探测器（SBPD）阵列的研究。在这项工作中，作者通过后退火工艺展示了基于非晶 ( a- ) Ga 2 O 3的超高性能金属-半导体-金属 (MSM) SBPD。退火后的 MSM a -Ga 2 O 3 SBPD 表现出 733 A/W 的超高灵敏度和 18 ms 的高响应速度，在 5 V 电压下具有超过 10 4的高增益带宽积。SBPD还表现出超高的光敏度。 -暗电流比为3.9×10 7。此外，由于低至3.5 fW Hz -1/2的极低噪声， PD 表现出 3.9 × 10 16 Jones 的超高比探测率，表明具有高信噪比。开尔文探针力显微镜和第一原理计算揭示了这种优异光电特性的根本机制。此外，首次制造了基于后退火a -Ga 2 O 3 SBPD的大规模、高均匀性32×32图像传感器阵列。由于阵列的高灵敏度和均匀性，可以获得高对比度的清晰目标物体图像。这些结果证明了Ga 2 O 3 PD在日盲成像、环境监测、人工智能和机器视觉应用中的可行性和实用性。
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