Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory,Advanced Electronic Materials

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Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-08-12 , DOI: 10.1002/aelm.202100599
Lihua He ₁ , Enlong Li ₁ , Weixin He ₁ , Yujie Yan ₁ , Shuqiong Lan ₁ , Rengjian Yu ₁ , Huipeng Chen _{1,

2} , Tailiang Guo _{1,

2}

Affiliation

Organic thin film transistor (OTFT) based nonvolatile memory has made significant progress due to its biocompatibility, flexibility, and low cost, in which ferroelectric transistor memory and floating gate transistor memory play the main roles in organic nonvolatile transistor memory. Here, a novel layered hybrid structure OTFT nonvolatile memory is invented by combining ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) P(VDF-TrFE) with a floating gate layer utilizing CdSe/ZnS quantum dots (QDs), which integrates the advantages of ferroelectric memory and floating gate memory. The core–shell structured CdSe/Zns QDs are acted as robust charge trapping centers due to their band structure similar to a quantum well, preventing the back diffuse of trapped charges, while P(VDF-TrFE) provides additional polarized electric field to modulate the capture of charge. The resultant devices exhibit high on-state current (≈10⁻⁵ A), low off-state current (≈10⁻¹⁰ A), excellent switch ratio (≈10⁵), and retention characteristic (>10⁴ s). Furthermore, a superior memory window, more than 85.6% of scanning voltage range, higher than most reported organic transistor memories, is achieved, which endows the device wide operating condition and significant discrimination between on and off state. The fine-structured OTFT memory opens up a unique path for desirable memory to meet the growing demand of microelectronic industry.

中文翻译：

用于高性能有机非易失性存储器的铁电和浮栅结构的互补

基于有机薄膜晶体管（OTFT）的非易失性存储器由于其生物相容性、灵活性和低成本而取得了重大进展，其中铁电晶体管存储器和浮栅晶体管存储器在有机非易失性晶体管存储器中起主要作用。在这里，通过结合铁电聚（偏二氟乙烯-co-三氟乙烯) P(VDF-TrFE) 具有利用 CdSe/ZnS 量子点 (QD) 的浮栅层，它集成了铁电存储器和浮栅存储器的优点。核壳结构的 CdSe/Zns 量子点由于其能带结构类似于量子阱而充当强大的电荷俘获中心，防止俘获电荷的反向扩散，而 P(VDF-TrFE) 提供额外的极化电场以调节捕获电荷。所得器件具有高导通电流（≈10 ^-5 A）、低截止电流（≈10 ^-10 A）、出色的开关比（≈10 ⁵）和保持特性（>10 ⁴s)。此外，实现了优于大多数报道的有机晶体管存储器的扫描电压范围的 85.6% 以上的优越存储器窗口，这赋予了器件宽工作条件和显着区分开和关状态。精细结构的 OTFT 存储器为理想的存储器开辟了一条独特的道路，以满足微电子行业不断增长的需求。

更新日期：2021-08-12

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