PtS2 和 SnSe2 中的内在电子传输特性和载流子密度：探索 2D 隧道 FET 的 n+ 源,Advanced Electronic Materials

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PtS2 和 SnSe2 中的内在电子传输特性和载流子密度：探索 2D 隧道 FET 的 n+ 源
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-08-05 , DOI: 10.1002/aelm.202100292
Yuichiro Sato ₁ , Tomonori Nishimura ₁ , Dong Duanfei ₂ , Keiji Ueno ₃ , Keisuke Shinokita ₂ , Kazunari Matsuda ₂ , Kosuke Nagashio ₁

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范德华二维异质结构是隧道场效应晶体管 (TFET) 的理想平台，因为它具有无悬挂键的异质界面。然而，n ⁺源材料的有限选择限制了 2D-TFET 的研究。在这项研究中，体 PtS _{2 的}本征电子传输特性和载流子密度 ( n )通过霍尔测量进行实验检查，以探索其作为适合 TFET的 n ⁺源材料与 SnSe ₂相比的用途。尽管最大耗尽宽度 ( W _Dm ) 和明显的金属I _D – V _G相似在室温下散装样品曲线中，霍尔测量阐明Ñ ≈3.6×10 ¹⁷厘米^-3在PTS ₂比≈4.7×10小得多的¹⁸厘米^-3的位SnSe ₂。他们还揭示了这种差异来自导带下方施主能级的深度。因此，尽管在 n-PtS ₂ /p-WSe ₂ TFET 中成功观察到带间隧道电流，但由于PtS的非简并掺杂，V _G调制了 n-PtS ₂源极和 p-WSe ₂通道₂，导致亚阈值摆动下降。对W _{Dm -}供体浓度 ( N _D ) 关系的分析表明，N _D不仅受W _Dm评估，而且在很大程度上受能隙的影响。不同能隙的一般W _Dm – N _D关系为选择适用于 TFET 的 2D 材料提供了指导。

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Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+-Source for 2D Tunnel FETs

Van der Waals 2D heterostructures are the ideal platform for tunnel field-effect transistors (TFETs) because of dangling-bond-free heterointerfaces. However, the limited selection of n⁺-source materials restricts 2D-TFET research. In this study, intrinsic electron transport properties and carrier density (n) of bulk PtS₂ are experimentally examined by Hall measurements to explore its use as an n⁺-source material suitable for TFETs in comparison with SnSe₂. Despite the similar maximum depletion widths (W_Dm) and apparently metallic I_D–V_G curves at room temperature for both bulk samples, the Hall measurements elucidate that n ≈ 3.6 × 10¹⁷ cm⁻³ in PtS₂ is much smaller than ≈4.7 × 10¹⁸ cm⁻³ in SnSe₂. They also reveal that this difference comes from the depth of the donor level below the conduction band. Therefore, although band-to-band tunneling current is successfully observed in the n-PtS₂/p-WSe₂ TFET, V_G modulates the n-PtS₂ source as well as p-WSe₂ channel due to the nondegenerate doping of PtS₂, resulting in a degraded subthreshold swing. The analysis of the W_Dm–donor concentration (N_D) relation elucidates that N_D is not evaluated only by W_Dm but is largely affected by the energy gap. The general W_Dm–N_D relation for different energy gaps provides a guide to select 2D materials suitable for TFETs.

更新日期：2021-08-05

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