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Solution-Gated Ultrathin Channel Indium Tin Oxide-Based Field-Effect Transistor Fabricated by a One-Step Procedure that Enables High-Performance Ion Sensing and Biosensing
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-05 , DOI: 10.1021/acsami.1c05830 Toshiya Sakata 1 , Shoichi Nishitani 1 , Akiko Saito 1 , Yuta Fukasawa 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-08-05 , DOI: 10.1021/acsami.1c05830 Toshiya Sakata 1 , Shoichi Nishitani 1 , Akiko Saito 1 , Yuta Fukasawa 1
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In this paper, we propose a one-step procedure for fabricating a solution-gated ultrathin channel indium tin oxide (ITO)-based field-effect transistor (FET) biosensor, thus providing an ″all-by-ITO″ technology. A thin-film sheet was placed on both ends of a metal shadow mask, which were contacted with a glass substrate. That is, the bottom of the metal shadow mask corresponding to the channel was slightly raised from the substrate, resulting in the creeping of some particles into the gap during sputtering. Owing to this modified metal shadow mask, a thin ITO channel (<30–40 nm) and thick ITO source/drain electrodes (ca. 100 nm) were simultaneously fabricated during the one-step sputtering. The thickness of ITO films was critical for them to be semiconductive, depending on the maximum depletion width (∼30–40 nm for the ITO channel), similarly to 2D materials. The ultrathin ITO channel worked as an ion-sensitive membrane as well owing to the intrinsic oxidated surface directly contacting with an electrolyte solution. The solution-gated 20-nm-thick channel ITO-based FET, with a steep subthreshold slope (SS) of 55 mV/dec (pH 7.41) attributable to the electric double-layer capacitance at the electrolyte solution/channel interface and the absence of interfacial traps among electrodes formed in one step, demonstrated an ideal pH responsivity (∼56 mV/pH), resulting in the real-time monitoring of cellular respiration and the long-term stability of electrical properties for 1 month. Moreover, the chemical modification of the ITO channel surface is expected to contribute to biomolecular recognition with ultrahigh sensitivity owing to the remarkably steep SS, which provided the exponential pH sensitivity in the subthreshold regime. Our new device produced in this one-step manner has a great future potential in bioelectronics.
中文翻译：
溶液门控超薄沟道氧化铟锡基场效应晶体管通过一步法制造，可实现高性能离子传感和生物传感
在本文中，我们提出了一种一步法制造溶液门控超薄沟道氧化铟锡 (ITO) 基场效应晶体管 (FET) 生物传感器，从而提供了“all-by-ITO”技术。将薄膜片放置在金属荫罩的两端，金属荫罩与玻璃基板接触。也就是通道对应的金属荫罩底部从基板上略微抬高，导致溅射时部分粒子会爬入间隙中。由于这种改进的金属阴影掩模，在一步溅射过程中同时制造了薄的 ITO 通道（<30-40 nm）和厚的 ITO 源/漏电极（约 100 nm）。ITO 薄膜的厚度对于它们是否具有半导体性至关重要，这取决于最大耗尽宽度（ITO 通道约为 30-40 nm），类似于二维材料。由于固有的氧化表面直接与电解质溶液接触，超薄 ITO 通道也可用作离子敏感膜。溶液门控的 20 nm 厚通道 ITO 基 FET，具有 55 mV/dec (pH 7.41) 的陡峭亚阈值斜率 (SS)，这归因于电解质溶液/通道界面处的双电层电容和不存在一步形成的电极之间的界面陷阱，证明了理想的 pH 响应度（~56 mV / pH），从而实时监测细胞呼吸和电性能的长期稳定性 1 个月。此外，由于 SS 非常陡峭，预计 ITO 通道表面的化学修饰有助于以超高灵敏度进行生物分子识别，这提供了亚阈值状态下的指数 pH 敏感性。我们以这种一步法生产的新设备在生物电子学方面具有巨大的未来潜力。
更新日期：2021-08-19
中文翻译：
溶液门控超薄沟道氧化铟锡基场效应晶体管通过一步法制造，可实现高性能离子传感和生物传感
在本文中，我们提出了一种一步法制造溶液门控超薄沟道氧化铟锡 (ITO) 基场效应晶体管 (FET) 生物传感器，从而提供了“all-by-ITO”技术。将薄膜片放置在金属荫罩的两端，金属荫罩与玻璃基板接触。也就是通道对应的金属荫罩底部从基板上略微抬高，导致溅射时部分粒子会爬入间隙中。由于这种改进的金属阴影掩模，在一步溅射过程中同时制造了薄的 ITO 通道（<30-40 nm）和厚的 ITO 源/漏电极（约 100 nm）。ITO 薄膜的厚度对于它们是否具有半导体性至关重要，这取决于最大耗尽宽度（ITO 通道约为 30-40 nm），类似于二维材料。由于固有的氧化表面直接与电解质溶液接触，超薄 ITO 通道也可用作离子敏感膜。溶液门控的 20 nm 厚通道 ITO 基 FET，具有 55 mV/dec (pH 7.41) 的陡峭亚阈值斜率 (SS)，这归因于电解质溶液/通道界面处的双电层电容和不存在一步形成的电极之间的界面陷阱，证明了理想的 pH 响应度（~56 mV / pH），从而实时监测细胞呼吸和电性能的长期稳定性 1 个月。此外，由于 SS 非常陡峭，预计 ITO 通道表面的化学修饰有助于以超高灵敏度进行生物分子识别，这提供了亚阈值状态下的指数 pH 敏感性。我们以这种一步法生产的新设备在生物电子学方面具有巨大的未来潜力。
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