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An Efficient Diazirine-Based Four-Armed Cross-linker for Photo-patterning of Polymeric Semiconductors
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2021-08-03 , DOI: 10.1002/anie.202108421 Changchun Wu 1 , Cheng Li 1 , Xiaobo Yu 1, 2 , Liangliang Chen 1, 2 , Chenying Gao 1, 2 , Xisha Zhang 1, 2 , Guanxin Zhang 1 , Deqing Zhang 1, 2
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2021-08-03 , DOI: 10.1002/anie.202108421 Changchun Wu 1 , Cheng Li 1 , Xiaobo Yu 1, 2 , Liangliang Chen 1, 2 , Chenying Gao 1, 2 , Xisha Zhang 1, 2 , Guanxin Zhang 1 , Deqing Zhang 1, 2
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A diazirine-based four-armed cross-linker (4CNN) with a tetrahedron geometry is presented for efficient patterning of polymeric semiconductors by photo-induced carbene insertion. After blending of 4CNN with no more than 3 % (w/w), photo-patterning of p-, n-, and ambipolar semiconducting polymers with side alkyl chains was achieved; regular patterns with size as small as 5 μm were prepared with appropriate photomasks after 365 nm irradiation for just 40 s. The interchain packing order and the thin film morphology were nearly unaltered after the cross-linking and the semiconducting properties of the patterned thin films were mostly retained. A complementary-like inverter with a gain value of 112 was constructed easily by two steps of photo-patterning of the p-type and n-type semiconducting polymers. The results show that 4CNN is a new generation of cross-linker for the photo-patterning of polymeric semiconductors for all-solution-processible flexible electronic devices.
中文翻译：
一种用于聚合物半导体光图案化的高效二氮嗪基四臂交联剂
提出了一种具有四面体几何形状的基于二氮丙啶的四臂交联剂 ( 4CNN )，用于通过光诱导卡宾插入对聚合物半导体进行有效图案化。4CNN混合后在不超过 3% (w/w) 的情况下，实现了具有侧烷基链的 p-、n- 和双极性半导体聚合物的光图案化；在 365 nm 照射仅 40 秒后，使用适当的光掩模制备尺寸小至 5 μm 的规则图案。交联后，链间堆积顺序和薄膜形态几乎没有改变，并且大部分保留了图案化薄膜的半导体特性。通过 p 型和 n 型半导体聚合物的两个光图案化步骤，可以轻松构建增益值为 112 的类似互补反相器。结果表明，4CNN是新一代交联剂，用于全溶液可加工柔性电子设备的聚合物半导体光图案化。
更新日期：2021-09-14
中文翻译：
一种用于聚合物半导体光图案化的高效二氮嗪基四臂交联剂
提出了一种具有四面体几何形状的基于二氮丙啶的四臂交联剂 ( 4CNN )，用于通过光诱导卡宾插入对聚合物半导体进行有效图案化。4CNN混合后在不超过 3% (w/w) 的情况下，实现了具有侧烷基链的 p-、n- 和双极性半导体聚合物的光图案化；在 365 nm 照射仅 40 秒后，使用适当的光掩模制备尺寸小至 5 μm 的规则图案。交联后，链间堆积顺序和薄膜形态几乎没有改变，并且大部分保留了图案化薄膜的半导体特性。通过 p 型和 n 型半导体聚合物的两个光图案化步骤，可以轻松构建增益值为 112 的类似互补反相器。结果表明，4CNN是新一代交联剂，用于全溶液可加工柔性电子设备的聚合物半导体光图案化。
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