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Controlling the Electron Concentration for Surface-Enhanced Raman Spectroscopy
ACS Photonics ( IF 6.5 ) Pub Date : 2021-07-27 , DOI: 10.1021/acsphotonics.1c00611 Thi Anh Nguyet Nguyen, Ying-Lung Yu, Ya Chien Chang, Yu-Han Wang, Wei-Yen Woon, Chien-Ting Wu, Kun-Lin Lin, Cheng-Yi Liu, Fan-Ching Chien, Kun-Yu Lai
ACS Photonics ( IF 6.5 ) Pub Date : 2021-07-27 , DOI: 10.1021/acsphotonics.1c00611 Thi Anh Nguyet Nguyen, Ying-Lung Yu, Ya Chien Chang, Yu-Han Wang, Wei-Yen Woon, Chien-Ting Wu, Kun-Lin Lin, Cheng-Yi Liu, Fan-Ching Chien, Kun-Yu Lai
Controlling the intensity of surface-enhanced Raman spectroscopy (SERS) in a systematic manner is the key to understanding, and even predicting, the dynamics of the imposing phenomenon. It has been known that the SERS signal is intensified by resonant electron oscillation at the hot spots. To date, few of the reported SERS techniques are capable of confining the contributive charges with a controlled concentration and position. Here, we systematically increase the carrier population a few nanometers below the hot spots, aiming to quantify the dependence of SERS intensity on surface charge concentration. The work is accomplished by InGaN quantum wells (QWs) grown by metal–organic chemical vapor deposition (MOCVD). Characterizing the QW wafers with capacitance–voltage curves and the correspondent Raman spectra, we observe a linear logarithmic dependence of SERS intensity on the electron concentration. The intensity is further boosted by nanostructuring the QW surface with adjusted MOCVD conditions.
中文翻译:
控制表面增强拉曼光谱的电子浓度
以系统的方式控制表面增强拉曼光谱 (SERS) 的强度是理解甚至预测强加现象动力学的关键。众所周知,SERS 信号会因热点处的共振电子振荡而增强。迄今为止,很少有报道的 SERS 技术能够以受控的浓度和位置来限制贡献电荷。在这里,我们系统地增加了热点以下几纳米的载流子数量,旨在量化 SERS 强度对表面电荷浓度的依赖性。这项工作是通过金属有机化学气相沉积 (MOCVD) 生长的 InGaN 量子阱 (QW) 来完成的。用电容-电压曲线和相应的拉曼光谱表征 QW 晶片,我们观察到 SERS 强度对电子浓度的线性对数依赖性。通过调整 MOCVD 条件对 QW 表面进行纳米结构化,强度进一步提高。
更新日期:2021-08-19
中文翻译:
控制表面增强拉曼光谱的电子浓度
以系统的方式控制表面增强拉曼光谱 (SERS) 的强度是理解甚至预测强加现象动力学的关键。众所周知,SERS 信号会因热点处的共振电子振荡而增强。迄今为止,很少有报道的 SERS 技术能够以受控的浓度和位置来限制贡献电荷。在这里,我们系统地增加了热点以下几纳米的载流子数量,旨在量化 SERS 强度对表面电荷浓度的依赖性。这项工作是通过金属有机化学气相沉积 (MOCVD) 生长的 InGaN 量子阱 (QW) 来完成的。用电容-电压曲线和相应的拉曼光谱表征 QW 晶片,我们观察到 SERS 强度对电子浓度的线性对数依赖性。通过调整 MOCVD 条件对 QW 表面进行纳米结构化,强度进一步提高。