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Designing Photochromic Materials with Large Luminescence Modulation and Strong Photochromic Efficiency for Dual-Mode Rewritable Optical Storage
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-07-16 , DOI: 10.1002/adom.202100669
Zetian Yang 1, 2 , Jiaren Du 1, 2, 3 , Lisa I. D. J. Martin 1, 2 , Ang Feng 1, 2 , Ewoud Cosaert 1, 2 , Bo Zhao 4 , Wanlu Liu 5 , Rik Van Deun 5 , Henk Vrielinck 6 , Dirk Poelman 1, 2
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-07-16 , DOI: 10.1002/adom.202100669
Zetian Yang 1, 2 , Jiaren Du 1, 2, 3 , Lisa I. D. J. Martin 1, 2 , Ang Feng 1, 2 , Ewoud Cosaert 1, 2 , Bo Zhao 4 , Wanlu Liu 5 , Rik Van Deun 5 , Henk Vrielinck 6 , Dirk Poelman 1, 2
Affiliation
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Inorganic materials combining photochromism and luminescence modulation characteristics have great potential in dual-mode rewritable optical storage due to their unique optical features and excellent thermal stability. However, the failure of achieving a large luminescence modulation and a strong photochromic efficiency in photostimulated inorganic photochromic materials limits their applications. Herein, a new strategy for realizing an overlap between the photochromic absorption peak and the photoluminescent emission/excitation peak is proposed for designing high-performance photochromic materials. The obtained BaMgSiO4: M (M = Ce3+, Mn2+, or Nd3+) ceramics exhibit a reversible white-pink color change upon alternate 310 nm and 590 nm illumination (or thermal stimulus) accompanied by a high photochromic efficiency (>50%). Benefiting from a perfectly matched photochromic absorption peak and Mn2+ emission peak, a record luminescence modulation of 96.3% with excellent fatigue resistance is obtained in BaMgSiO4: Mn2+ ceramics. These properties are superior to all photochromic materials reported to date, demonstrating great potential in optical information storage applications. The trap-related photochromic and regulated luminescence behavior is investigated together with a prototype of a dual-mode information display. This work is expected to promote the practical application of photochromic materials in various optical devices and provides an effective strategy to develop other photochromic materials.
中文翻译:
为双模可重写光存储设计具有大发光调制和强光致变色效率的光致变色材料
结合光致变色和发光调制特性的无机材料由于其独特的光学特性和优异的热稳定性,在双模可重写光存储方面具有巨大的潜力。然而,在光刺激无机光致变色材料中未能实现大的发光调制和强的光致变色效率限制了它们的应用。在此,提出了一种实现光致变色吸收峰与光致发光发射/激发峰重叠的新策略,以设计高性能光致变色材料。得到的BaMgSiO 4 :M(M=Ce 3+、Mn 2+或Nd 3+) 陶瓷在交替的 310 nm 和 590 nm 照明(或热刺激)下表现出可逆的白-粉红色变化,并伴有高光致变色效率(> 50%)。得益于完美匹配的光致变色吸收峰和 Mn 2+发射峰,在 BaMgSiO 4 : Mn 2+ 中获得了创纪录的 96.3% 的发光调制和出色的抗疲劳性陶瓷。这些性能优于迄今为止报道的所有光致变色材料,在光信息存储应用中展示了巨大的潜力。与双模式信息显示器的原型一起研究了与陷阱相关的光致变色和受调节的发光行为。这项工作有望促进光致变色材料在各种光学器件中的实际应用,并为开发其他光致变色材料提供有效的策略。
更新日期:2021-07-16
中文翻译:

为双模可重写光存储设计具有大发光调制和强光致变色效率的光致变色材料
结合光致变色和发光调制特性的无机材料由于其独特的光学特性和优异的热稳定性,在双模可重写光存储方面具有巨大的潜力。然而,在光刺激无机光致变色材料中未能实现大的发光调制和强的光致变色效率限制了它们的应用。在此,提出了一种实现光致变色吸收峰与光致发光发射/激发峰重叠的新策略,以设计高性能光致变色材料。得到的BaMgSiO 4 :M(M=Ce 3+、Mn 2+或Nd 3+) 陶瓷在交替的 310 nm 和 590 nm 照明(或热刺激)下表现出可逆的白-粉红色变化,并伴有高光致变色效率(> 50%)。得益于完美匹配的光致变色吸收峰和 Mn 2+发射峰,在 BaMgSiO 4 : Mn 2+ 中获得了创纪录的 96.3% 的发光调制和出色的抗疲劳性陶瓷。这些性能优于迄今为止报道的所有光致变色材料,在光信息存储应用中展示了巨大的潜力。与双模式信息显示器的原型一起研究了与陷阱相关的光致变色和受调节的发光行为。这项工作有望促进光致变色材料在各种光学器件中的实际应用,并为开发其他光致变色材料提供有效的策略。