Abstract Thin films of cadmium tin oxide (Cd 2 SnO 4 ) have been deposited on glass substrates by RF magnetron co-sputtering from cadmium oxide (CdO) and tin oxide (SnO 2 ) targets in an Argon ambient. Co-sputtering offers a means to control the atomic stoichiometry of Cd 2 SnO 4 , which influences the material's electro-optical and structural properties. The Cd 2 SnO 4 films were deposited at room temperature and subsequently subjected to a heat treatment in inert or reducing (H 2 ) ambient. The as-deposited films were amorphous, and became polycrystalline after annealing at high temperatures. Using this method, Cd 2 SnO 4 films with a Hall mobility of 32.3 cm 2 V −1 s −1 and a carrier concentration of 7.40×10 20 cm −3 corresponding to a resistivity of 2.07×10 −4 Ω cm have been prepared. The films exhibited average optical total transmission in excess of 90% in the visible region. The optical bandgap was found to be in the range of 2.97–3.18 eV, depending on post deposition treatment.

中文翻译：

---

由组成二元氧化物的射频磁控共溅射制备的 Cd2SnO4 透明导电氧化物薄膜

摘要 氧化镉 (CdO) 和氧化锡 (SnO 2 ) 靶材在氩气环境中通过射频磁控管共溅射在玻璃基板上沉积了氧化镉锡 (Cd 2 SnO 4 ) 薄膜。共溅射提供了一种控制 Cd 2 SnO 4 原子化学计量的方法，这会影响材料的光电和结构特性。Cd 2 SnO 4 膜在室温下沉积，随后在惰性或还原性（H 2 ）环境中进行热处理。沉积的薄膜是无定形的，在高温退火后变成多晶。使用该方法制备了霍尔迁移率为32.3 cm 2 V -1 s -1 和载流子浓度为7.40×10 20 cm -3 的Cd 2 SnO 4 薄膜，对应于2.07×10 -4 Ω cm的电阻率. 这些薄膜在可见光区表现出超过 90% 的平均光学总透射率。发现光学带隙在 2.97-3.18 eV 的范围内，具体取决于沉积后处理。