Tin sulfide quantum dots (SnS2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS2 QDs are complicated and require a high temperature and high pressure environments; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green, and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS2 QDs are studied. The synthesized SnS2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS2 QDs is fabricated and its J–V and C–V characteristics are also studied. The detector responds under λ = 365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS2 QDs in photodetectors.

中文翻译：

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SnS2 量子点：简便的合成、性质和在紫外光电探测器中的应用

硫化锡量子点 (SnS2 QD) 是 n 型宽带隙半导体。它们在紫外和可见光区域表现出高光吸收系数和强光电导性能。因此，它们被发现具有许多潜在的应用，例如气体传感器、电阻器、光电探测器、光催化剂和太阳能电池。然而，现有的SnS2 QDs制备方法复杂，需要高温高压环境；因此它们不适合大规模工业生产。本文将讨论一种在常温常压下制备单分散 SnS2 QD 的有效方法。该方法简便、绿色、成本低。在这项工作中，研究了 SnS2 QD 的结构、形貌、光学、电学和光电特性。合成的 SnS2 QD 尺寸均匀，表现出良好的光电性能。制作了基于 SnS2 QD 的光电探测器，并研究了其 J-V 和 C-V 特性。检测器在 λ = 365 nm 光照射和反向偏置电压下响应。它的探测率在室温下大约稳定在 1011 琼斯。这些结果表明在光电探测器中可能使用 SnS2 QD。