Temperature-Dependent Energy-Level Shifts of Spin Defects in Hexagonal Boron Nitride,ACS Photonics

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Temperature-Dependent Energy-Level Shifts of Spin Defects in Hexagonal Boron Nitride
ACS Photonics ( IF 6.5 ) Pub Date : 2021-07-09 , DOI: 10.1021/acsphotonics.1c00320
Wei Liu _{1,

2} , Zhi-Peng Li _{1,

2} , Yuan-Ze Yang _{1,

2} , Shang Yu _{1,

2} , Yu Meng _{1,

2} , Zhao-An Wang _{1,

2} , Ze-Cheng Li _{1,

2} , Nai-Jie Guo _{1,

2} , Fei-Fei Yan _{1,

2} , Qiang Li _{1,

2} , Jun-Feng Wang _{1,

2} , Jin-Shi Xu _{1,

2} , Yi-Tao Wang _{1,

2} , Jian-Shun Tang _{1,

2} , Chuan-Feng Li _{1,

2} , Guang-Can Guo _{1,

2}

Affiliation

Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for realizing integrated nanophotonics, and a collective effort has been focused on spin defect centers. Here, the temperature dependence of the optically detected magnetic resonance (ODMR) spectrum of negatively charged boron vacancy (V_B^–) ensembles in the range of 5–600 K is investigated. The microwave transition energy is found to decrease monotonically with increasing temperature and can be described by the Varshni empirical equation very well. Considering the proportional relation between energy-level shifts and the reciprocal lattice volume (V^–1), thermal expansion might be the dominant cause for energy-level shifts. We also demonstrate that the V_B^– defects are stable at up to 600 K. Moreover, we find that there are evident differences among different hBN nanopowders, which might originate from the local strain and distance of defects from the flake edges. Our results may provide insight into the spin properties of V_B^– and for the realization of miniaturized, integrated thermal sensors.

中文翻译：

六方氮化硼中自旋缺陷的温度相关能级变化

二维六方氮化硼 (hBN) 作为实现集成纳米光子学的平台引起了很多关注，并且集体努力集中在自旋缺陷中心。在这里，研究了在 5-600 K 范围内带负电荷的硼空位 (V _B^- ) 系综的光学检测磁共振 (ODMR) 光谱的温度依赖性。发现微波跃迁能量随着温度的升高而单调降低，并且可以很好地由 Varshni 经验方程描述。考虑到能级位移与倒易晶格体积 ( V ^–1 )之间的比例关系，热膨胀可能是能级位移的主要原因。我们还证明了 V _B^–缺陷在高达 600 K 时是稳定的。此外，我们发现不同 hBN 纳米粉末之间存在明显差异，这可能源于局部应变和缺陷与薄片边缘的距离。我们的研究结果可以提供深入了解V的自旋性质_乙^-和为实现小型化，集成的热传感器。

更新日期：2021-07-21

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